TY - JOUR
T1 - Sintering behavior and microwave dielectric properties of ZnCuTiO4 ceramics
AU - Tseng, Yu Wei
AU - Huang, Cheng Liang
N1 - Funding Information:
This work was financially supported by the National Science Council of Taiwan under Grant MOST103-2221-E-006-071 .
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/7/25
Y1 - 2015/7/25
N2 - Being a second phase in the Zn-Cu-Ti-contained ceramic systems, the sintering behavior and microwave dielectric properties of ZnCuTiO4 are investigated for the first time. The ZnCuTiO4 phase forms at a temperature less than 700 °C and the dependence of the dielectric properties of the ceramics on the sintering condition is found to be insignificant at sintering temperatures ranging from 900 to 1050 °C and with sintering time from 30 to 120 min. The relative densities of the specimens are higher than 95% for the entire temperature range tested during the experiment. Rather than being determined by the relative density, the Q × f of ZnCuTiO4 ceramics is being controlled instead by the packing fraction. Specimen using ZnCuTiO4 possesses a combination of dielectric properties with εr of 18.86-19.69, Q × f of 4600-6000 GHz, and τf of -29.1 to -34.7 ppm/°C.
AB - Being a second phase in the Zn-Cu-Ti-contained ceramic systems, the sintering behavior and microwave dielectric properties of ZnCuTiO4 are investigated for the first time. The ZnCuTiO4 phase forms at a temperature less than 700 °C and the dependence of the dielectric properties of the ceramics on the sintering condition is found to be insignificant at sintering temperatures ranging from 900 to 1050 °C and with sintering time from 30 to 120 min. The relative densities of the specimens are higher than 95% for the entire temperature range tested during the experiment. Rather than being determined by the relative density, the Q × f of ZnCuTiO4 ceramics is being controlled instead by the packing fraction. Specimen using ZnCuTiO4 possesses a combination of dielectric properties with εr of 18.86-19.69, Q × f of 4600-6000 GHz, and τf of -29.1 to -34.7 ppm/°C.
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U2 - 10.1016/j.jallcom.2015.03.067
DO - 10.1016/j.jallcom.2015.03.067
M3 - Letter
AN - SCOPUS:84925359666
SN - 0925-8388
VL - 638
SP - 29
EP - 33
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -