SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

J. W. Shi, P. H. Chiu, F. H. Huang, Y. S. Wu, Ja Yu Lu, C. K. Sun, C. W. Liu, P. S. Chen

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We demonstrate a SiSiG -based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p -type-doped Si Si0.5 Ge0.5 -based superlattice with a Si-based depletion layer to enhance the photoabsorption process and minimize the hole-trapping problem of the SiSiGe multiple quantum well. An extremely high bandwidth-efficiency product performance (10 GHz, 276%, 27.6 GHz) and high peak output voltage (1.5 V) have been achieved simultaneously by operating this device in the avalanche regime.

Original languageEnglish
Article number193506
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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