Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

Chung Lin Wu, Li Jen Chou, Shangjr Gwo

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.

Original languageEnglish
Pages (from-to)2071-2073
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
Publication statusPublished - 2004 Sep 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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