Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

Chung Lin Wu; Li Jen Chou; Shangjr Gwo

doi:10.1063/1.1787947

Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

Chung Lin Wu, Li Jen Chou, Shangjr Gwo

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si₃N₄/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.

Original language	English
Pages (from-to)	2071-2073
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1787947
Publication status	Published - 2004 Sep 13

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1787947

Cite this

@article{0cd36b37892845e8bdcfaa3c81553112,

title = "Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy",

abstract = "The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.",

author = "Wu, {Chung Lin} and Chou, {Li Jen} and Shangjr Gwo",

note = "Funding Information: This work was supported in part by the National Nanoscience and Nanotechnology Project and the National Science Council in Taiwan (NSC-93-2120-M-007-002 and NSC-93-2112-M-007-010).",

year = "2004",

month = sep,

day = "13",

doi = "10.1063/1.1787947",

language = "English",

volume = "85",

pages = "2071--2073",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

AU - Wu, Chung Lin

AU - Chou, Li Jen

AU - Gwo, Shangjr

N1 - Funding Information: This work was supported in part by the National Nanoscience and Nanotechnology Project and the National Science Council in Taiwan (NSC-93-2120-M-007-002 and NSC-93-2112-M-007-010).

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.

AB - The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.

UR - http://www.scopus.com/inward/record.url?scp=5444240782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5444240782&partnerID=8YFLogxK

U2 - 10.1063/1.1787947

DO - 10.1063/1.1787947

M3 - Article

AN - SCOPUS:5444240782

VL - 85

SP - 2071

EP - 2073

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -

Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this