Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

Chung Lin Wu; Li Jen Chou; Shangjr Gwo

doi:10.1063/1.1787947

Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

Chung Lin Wu, Li Jen Chou, Shangjr Gwo

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si₃N₄/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.

Original language	English
Pages (from-to)	2071-2073
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1787947
Publication status	Published - 2004 Sep 13

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1787947

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title = "Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy",

abstract = "The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.",

author = "Wu, {Chung Lin} and Chou, {Li Jen} and Shangjr Gwo",

note = "Funding Information: This work was supported in part by the National Nanoscience and Nanotechnology Project and the National Science Council in Taiwan (NSC-93-2120-M-007-002 and NSC-93-2112-M-007-010). ",

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T1 - Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

AU - Wu, Chung Lin

AU - Chou, Li Jen

AU - Gwo, Shangjr

N1 - Funding Information: This work was supported in part by the National Nanoscience and Nanotechnology Project and the National Science Council in Taiwan (NSC-93-2120-M-007-002 and NSC-93-2112-M-007-010).

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.

AB - The coherent GaN nanocrystals spontaneously formed by nitrogen-plasma- assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4/Si surface were discussed. The distribution of grown GaN nanocrystal was very uniform in size and shape and the distribution width was significantly lower than that of Ga droplets deposited in the Volmer-Weber mode. The cross section of the nanocrystal was trapezoidal and lattice structure was wurtzite-type and defect-free. Analysis shows that the shape and crystalline structure of the self-assembled GaN nanocrystal was truncated triangular pyramids formed by the facets of the GaN wurtzite lattice.

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