Size effect in the electronic transport of thin films of Bi2Se3

V. V. Marchenkov, V. V. Chistyakov, J. C.A. Huang, Y. A. Perevozchikova, A. N. Domozhirova, M. Eisterer

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Abstract

Thin films of a topological insulator (TI) Bi2Se3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to "separate" the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section.

Original languageEnglish
Article number01002
JournalEPJ Web of Conferences
Volume185
DOIs
Publication statusPublished - 2018 Jul 4
Event2017 Moscow International Symposium on Magnetism, MISM 2017 - Moscow, Russian Federation
Duration: 2017 Jul 12017 Jul 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Marchenkov, V. V., Chistyakov, V. V., Huang, J. C. A., Perevozchikova, Y. A., Domozhirova, A. N., & Eisterer, M. (2018). Size effect in the electronic transport of thin films of Bi2Se3 EPJ Web of Conferences, 185, [01002]. https://doi.org/10.1051/epjconf/201818501002