TY - JOUR
T1 - Size effect in the electronic transport of thin films of Bi2Se3
AU - Marchenkov, V. V.
AU - Chistyakov, V. V.
AU - Huang, J. C.A.
AU - Perevozchikova, Y. A.
AU - Domozhirova, A. N.
AU - Eisterer, M.
N1 - Publisher Copyright:
© 2018 The Authors, published by EDP Sciences.
PY - 2018/7/4
Y1 - 2018/7/4
N2 - Thin films of a topological insulator (TI) Bi2Se3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to "separate" the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section.
AB - Thin films of a topological insulator (TI) Bi2Se3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to "separate" the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section.
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U2 - 10.1051/epjconf/201818501002
DO - 10.1051/epjconf/201818501002
M3 - Conference article
AN - SCOPUS:85052894107
SN - 2101-6275
VL - 185
JO - EPJ Web of Conferences
JF - EPJ Web of Conferences
M1 - 01002
T2 - 2017 Moscow International Symposium on Magnetism, MISM 2017
Y2 - 1 July 2017 through 5 July 2017
ER -