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Size effect in the electronic transport of thin films of Bi
2
Se
3
V. V. Marchenkov
, V. V. Chistyakov
,
J. C.A. Huang
, Y. A. Perevozchikova
, A. N. Domozhirova
, M. Eisterer
Department of Physics
Research output
:
Contribution to journal
›
Conference article
›
peer-review
6
Citations (Scopus)
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2
Se
3
'. Together they form a unique fingerprint.
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Keyphrases
Size Effect
100%
Bismuth Telluride
100%
Electronic Transport
100%
Surface Conductivity
50%
Magnetic Field
50%
Temperature Field
50%
Resistivity Measurement
50%
Topological Insulator
50%
DC Current
50%
Bulk Conductivity
50%
Inhomogeneous Distribution
50%
Engineering
Thin Films
100%
Size Effect
100%
Cross Section
50%
Temperature Distribution
50%
Magnetic Field
50%
Physics
Thin Films
100%
Magnetic Field
50%
Topological Insulator
50%
Temperature Distribution
50%
Material Science
Thin Films
100%
Surface (Surface Science)
50%
Electrical Resistivity
50%
Chemical Engineering
Film
100%