TY - JOUR
T1 - Small electronic specific heat in the electron doped Cu-oxide superconductors
AU - Sera, M.
AU - Shamoto, S.
AU - Sato, M.
N1 - Funding Information:
Acknowledgements --This work is supported by Grand-in-Aid for Scientific Research of Priority Areas of the Ministry of Education, Science and Culture.
PY - 1989/11
Y1 - 1989/11
N2 - The specific heat of the electron doped high-Tc Cu-oxides, Nd1.85Ce0.15CuO4 and Pr2-xCexCuO4 (0≤×≤0.25) has been studied, where the attention was focussed on the behaviors around the superconducting transition temperature Tc in the former and at low temperatures in the latter. The specific heat of Nd1.85Ce0.15CuO4 shows a very small jump at Tc from which the electronic specific heat coefficient γ was estimated to be ∼ 1.2mJ/mol K2 by assuming ΔC/Tc=1.43γ. The γ value of Pr2-xCexCuO4 was estimated from the low temperature specific heat data obtained in the normal state near the metallic region as ∼ 2mJ/mol K2 for x{reversed tilde equals}0.15, which is rather small compared to those of the hole doped Cu-oxide superconductors La2-xMxCuO4 (M=Ba or Sr). This indicates that the effective mass m* of the carriers in the electron doped system is smaller than those in the hole doped systems.
AB - The specific heat of the electron doped high-Tc Cu-oxides, Nd1.85Ce0.15CuO4 and Pr2-xCexCuO4 (0≤×≤0.25) has been studied, where the attention was focussed on the behaviors around the superconducting transition temperature Tc in the former and at low temperatures in the latter. The specific heat of Nd1.85Ce0.15CuO4 shows a very small jump at Tc from which the electronic specific heat coefficient γ was estimated to be ∼ 1.2mJ/mol K2 by assuming ΔC/Tc=1.43γ. The γ value of Pr2-xCexCuO4 was estimated from the low temperature specific heat data obtained in the normal state near the metallic region as ∼ 2mJ/mol K2 for x{reversed tilde equals}0.15, which is rather small compared to those of the hole doped Cu-oxide superconductors La2-xMxCuO4 (M=Ba or Sr). This indicates that the effective mass m* of the carriers in the electron doped system is smaller than those in the hole doped systems.
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U2 - 10.1016/0038-1098(89)90901-0
DO - 10.1016/0038-1098(89)90901-0
M3 - Article
AN - SCOPUS:0024765162
VL - 72
SP - 749
EP - 752
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 8
ER -