TY - JOUR
T1 - Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
AU - Shih, Yu Chuan
AU - Lee, Ling
AU - Liang, Kai De
AU - Manikandan, Arumugam
AU - Liu, Wen Wu
AU - Chen, Yu Ze
AU - Chang, Mu Tung
AU - Wang, Zhiming M.
AU - Chueh, Yu Lun
N1 - Funding Information:
The author acknowledges the financial support from the Ministry of Science and Technology through 108‐2218‐E‐007‐045, 107‐2923‐E‐007‐002‐MY3, 106‐2923‐E‐007‐006‐MY2, 107‐2112‐M‐007‐030‐MY3 and 108‐2731‐M‐007‐001.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/5
Y1 - 2021/5
N2 - Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current-induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current-induced oxidization process. With the in situ current-induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >103 and a low switching voltage of <0.5 V can be obtained. The initial current-induced oxidation provides a core–shell (Cu2O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full- metallic materials.
AB - Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current-induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current-induced oxidization process. With the in situ current-induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >103 and a low switching voltage of <0.5 V can be obtained. The initial current-induced oxidation provides a core–shell (Cu2O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full- metallic materials.
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U2 - 10.1002/aelm.202000252
DO - 10.1002/aelm.202000252
M3 - Article
AN - SCOPUS:85100979026
SN - 2199-160X
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 5
M1 - 2000252
ER -