Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.

Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 2012 Dec 32012 Dec 5

Publication series

Name2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Other

Other2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
CountryThailand
CityBangkok
Period12-12-0312-12-05

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Chang, Y. C., Wei, C. Y., & Wang, Y. H. (2012). Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 [6482870] (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012). https://doi.org/10.1109/EDSSC.2012.6482870