Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer

Yu Chi Chang, Chia Yu Wei, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.

Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 2012
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 2012 Dec 32012 Dec 5

Other

Other2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
CountryThailand
CityBangkok
Period12-12-0312-12-05

Fingerprint

Barium titanate
Graphene
Sol-gel process
Sol-gels
Data storage equipment
Oxides
Functional groups
Oxygen

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chang, Y. C., Wei, C. Y., & Wang, Y-H. (2012). Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 [6482870] https://doi.org/10.1109/EDSSC.2012.6482870
Chang, Yu Chi ; Wei, Chia Yu ; Wang, Yeong-Her. / Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer. 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012.
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abstract = "The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.",
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Chang, YC, Wei, CY & Wang, Y-H 2012, Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482870, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 12-12-03. https://doi.org/10.1109/EDSSC.2012.6482870

Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer. / Chang, Yu Chi; Wei, Chia Yu; Wang, Yeong-Her.

2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482870.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Chang, Yu Chi

AU - Wei, Chia Yu

AU - Wang, Yeong-Her

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N2 - The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.

AB - The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.

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Chang YC, Wei CY, Wang Y-H. Sol-gel barium titanate-based RRAM by inserting graphene oxide interlayer. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482870 https://doi.org/10.1109/EDSSC.2012.6482870