Sol-gel derived TiNb 2 O 7 dielectric thin films for transparent electronic applications

Ming Chuan Chang, Chieh Szu Huang, Yi Da Ho, Cheng-Liang Huang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To reduce power consumption of transparent oxide-semiconductor thin film transistors, a gate dielectric material with high dielectric constant and low leakage current density is favorable. According to previous study, the bulk TiNb 2 O 7 with outstanding dielectric properties may have an interest in its thin-film form. The optical, chemical states and surface morphology of sol-gel derived TiNb 2 O 7 (TNO) thin films are investigated the effect of postannealing temperature lower than 500°C, which is crucial to the glass transition temperature. All films possess a transmittance near 80% in the visible region. The existence of non-lattice oxygen in the TNO film is proposed. The peak area ratio of non-lattice oxygen plays an important role in the control of leakage current density of MIM capacitors. Also, the capacitance density and dissipation factor were affected by the indium tin oxide (ITO) sheet resistance at high frequencies. The sample after postannealing at 300°C and electrode-annealing at 150°C possesses a high dielectric constant (>30 at 1 MHz) and a low leakage current density (<1 × 10 −6  A/cm 2 at 1 V), which makes it a very promising gate dielectric material for transparent oxide-semiconductor thin film transistors.

Original languageEnglish
Pages (from-to)674-682
Number of pages9
JournalJournal of the American Ceramic Society
Volume101
Issue number2
DOIs
Publication statusPublished - 2018 Feb 1

Fingerprint

Dielectric films
Leakage currents
Sol-gels
Current density
Gate dielectrics
Thin film transistors
Thin films
Permittivity
Oxygen
Sheet resistance
Tin oxides
Dielectric properties
Indium
Surface morphology
Electric power utilization
Capacitors
Capacitance
Annealing
Electrodes
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

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title = "Sol-gel derived TiNb 2 O 7 dielectric thin films for transparent electronic applications",
abstract = "To reduce power consumption of transparent oxide-semiconductor thin film transistors, a gate dielectric material with high dielectric constant and low leakage current density is favorable. According to previous study, the bulk TiNb 2 O 7 with outstanding dielectric properties may have an interest in its thin-film form. The optical, chemical states and surface morphology of sol-gel derived TiNb 2 O 7 (TNO) thin films are investigated the effect of postannealing temperature lower than 500°C, which is crucial to the glass transition temperature. All films possess a transmittance near 80{\%} in the visible region. The existence of non-lattice oxygen in the TNO film is proposed. The peak area ratio of non-lattice oxygen plays an important role in the control of leakage current density of MIM capacitors. Also, the capacitance density and dissipation factor were affected by the indium tin oxide (ITO) sheet resistance at high frequencies. The sample after postannealing at 300°C and electrode-annealing at 150°C possesses a high dielectric constant (>30 at 1 MHz) and a low leakage current density (<1 × 10 −6  A/cm 2 at 1 V), which makes it a very promising gate dielectric material for transparent oxide-semiconductor thin film transistors.",
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Sol-gel derived TiNb 2 O 7 dielectric thin films for transparent electronic applications . / Chang, Ming Chuan; Huang, Chieh Szu; Ho, Yi Da; Huang, Cheng-Liang.

In: Journal of the American Ceramic Society, Vol. 101, No. 2, 01.02.2018, p. 674-682.

Research output: Contribution to journalArticle

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