Sol-gel strontium titanate nickelate thin films for flexible nonvolatile memory applications

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Li Wen Wang, Yeong Her Wang, Dei Wei Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bipolar resistive switching random access memory (RRAM) devices on a plastic substrate are investigated. Strontium titanate nickelate (STN) thin film prepared by sol-gel method served as insulator on an Al/STN/ITO/PET structure. The STN-based flexible RRAM shows a high ON/OFF resistance ratio (≥ 105) and a retention ability of over 105 s. The characteristics of Ni in the STO thin films demonstrate that spin casting without doping other elements or any complex processes can be used to fabricate thin films with higher density of oxygen vacancies, less particles, and smoother surface. In addition, the fabricated devices on a flexible plastic substrate exhibit excellent durability upon repeated bending tests, demonstrating the potential for flexible and low-cost memory applications.

Original languageEnglish
Title of host publication7th IEEE International Nanoelectronics Conference 2016, INEC 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781467389693
DOIs
Publication statusPublished - 2016 Oct 12
Event7th IEEE International Nanoelectronics Conference, INEC 2016 - Chengdu, China
Duration: 2016 May 92016 May 11

Publication series

NameProceedings - International NanoElectronics Conference, INEC
Volume2016-October
ISSN (Print)2159-3523

Other

Other7th IEEE International Nanoelectronics Conference, INEC 2016
Country/TerritoryChina
CityChengdu
Period16-05-0916-05-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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