Abstract
Nanostructured LaNiO3-x (x>0) was prepared at low temperature between 500-800 °C by the sol-gel method. Their potentials as a thermoelectric material were investigated. The minimum temperature to form the LaNiO3-x phase in air was 600 °C. The samples sintered between 600 and 800 °C had a grain size of 18-31 nm and showed a metallic behaviour with the linear temperature dependence of electrical resistivity and Seebeck coefficient. The electrical conductivity at room temperature varied from 581 to 810 S/cm and the thermal conductivity from 0.580 to 0.886 Wm-1 K-1. Negative Seebeck coefficient was observed for all the samples, indicating that the likely charge carrier was electron, which was confirmed by the Hall-effect measurements. The absolute value of the Seebeck coefficient was 12-15 μV/K at 300 K and increased approximately linearly with temperature in the measured range up to 550 K. The attainable ZT so far was 0.034 at 550 K and would rise to 0.15 at 1000 K, which was comparable to the values of other promising n-type oxide thermoelectrics currently under development, such as Nb/La-doped SrTiO3 and Al-doped ZnO.
| Original language | English |
|---|---|
| Pages (from-to) | 1406-1411 |
| Number of pages | 6 |
| Journal | Science of Advanced Materials |
| Volume | 6 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Sol-gel synthesis and characterisation of nanostructured LaNiO3-x for thermoelectric applications. / Hsiao, Chun Lung; Chang, Wei Che; Qi, Xiao-Ding.
In: Science of Advanced Materials, Vol. 6, No. 7, 01.01.2014, p. 1406-1411.Research output: Contribution to journal › Article
TY - JOUR
T1 - Sol-gel synthesis and characterisation of nanostructured LaNiO3-x for thermoelectric applications
AU - Hsiao, Chun Lung
AU - Chang, Wei Che
AU - Qi, Xiao-Ding
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Nanostructured LaNiO3-x (x>0) was prepared at low temperature between 500-800 °C by the sol-gel method. Their potentials as a thermoelectric material were investigated. The minimum temperature to form the LaNiO3-x phase in air was 600 °C. The samples sintered between 600 and 800 °C had a grain size of 18-31 nm and showed a metallic behaviour with the linear temperature dependence of electrical resistivity and Seebeck coefficient. The electrical conductivity at room temperature varied from 581 to 810 S/cm and the thermal conductivity from 0.580 to 0.886 Wm-1 K-1. Negative Seebeck coefficient was observed for all the samples, indicating that the likely charge carrier was electron, which was confirmed by the Hall-effect measurements. The absolute value of the Seebeck coefficient was 12-15 μV/K at 300 K and increased approximately linearly with temperature in the measured range up to 550 K. The attainable ZT so far was 0.034 at 550 K and would rise to 0.15 at 1000 K, which was comparable to the values of other promising n-type oxide thermoelectrics currently under development, such as Nb/La-doped SrTiO3 and Al-doped ZnO.
AB - Nanostructured LaNiO3-x (x>0) was prepared at low temperature between 500-800 °C by the sol-gel method. Their potentials as a thermoelectric material were investigated. The minimum temperature to form the LaNiO3-x phase in air was 600 °C. The samples sintered between 600 and 800 °C had a grain size of 18-31 nm and showed a metallic behaviour with the linear temperature dependence of electrical resistivity and Seebeck coefficient. The electrical conductivity at room temperature varied from 581 to 810 S/cm and the thermal conductivity from 0.580 to 0.886 Wm-1 K-1. Negative Seebeck coefficient was observed for all the samples, indicating that the likely charge carrier was electron, which was confirmed by the Hall-effect measurements. The absolute value of the Seebeck coefficient was 12-15 μV/K at 300 K and increased approximately linearly with temperature in the measured range up to 550 K. The attainable ZT so far was 0.034 at 550 K and would rise to 0.15 at 1000 K, which was comparable to the values of other promising n-type oxide thermoelectrics currently under development, such as Nb/La-doped SrTiO3 and Al-doped ZnO.
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U2 - 10.1166/sam.2014.1827
DO - 10.1166/sam.2014.1827
M3 - Article
VL - 6
SP - 1406
EP - 1411
JO - Science of Advanced Materials
JF - Science of Advanced Materials
SN - 1947-2935
IS - 7
ER -