Sol-gel synthesis and characterisation of nanostructured LaNiO3-x for thermoelectric applications

Chun Lung Hsiao, Wei Che Chang, Xiao-Ding Qi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Nanostructured LaNiO3-x (x>0) was prepared at low temperature between 500-800 °C by the sol-gel method. Their potentials as a thermoelectric material were investigated. The minimum temperature to form the LaNiO3-x phase in air was 600 °C. The samples sintered between 600 and 800 °C had a grain size of 18-31 nm and showed a metallic behaviour with the linear temperature dependence of electrical resistivity and Seebeck coefficient. The electrical conductivity at room temperature varied from 581 to 810 S/cm and the thermal conductivity from 0.580 to 0.886 Wm-1 K-1. Negative Seebeck coefficient was observed for all the samples, indicating that the likely charge carrier was electron, which was confirmed by the Hall-effect measurements. The absolute value of the Seebeck coefficient was 12-15 μV/K at 300 K and increased approximately linearly with temperature in the measured range up to 550 K. The attainable ZT so far was 0.034 at 550 K and would rise to 0.15 at 1000 K, which was comparable to the values of other promising n-type oxide thermoelectrics currently under development, such as Nb/La-doped SrTiO3 and Al-doped ZnO.

Original languageEnglish
Pages (from-to)1406-1411
Number of pages6
JournalScience of Advanced Materials
Volume6
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1

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Sol-gels
Seebeck coefficient
Temperature
Hall effect
Charge carriers
Oxides
Sol-gel process
Thermal conductivity
Electrons
Air

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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title = "Sol-gel synthesis and characterisation of nanostructured LaNiO3-x for thermoelectric applications",
abstract = "Nanostructured LaNiO3-x (x>0) was prepared at low temperature between 500-800 °C by the sol-gel method. Their potentials as a thermoelectric material were investigated. The minimum temperature to form the LaNiO3-x phase in air was 600 °C. The samples sintered between 600 and 800 °C had a grain size of 18-31 nm and showed a metallic behaviour with the linear temperature dependence of electrical resistivity and Seebeck coefficient. The electrical conductivity at room temperature varied from 581 to 810 S/cm and the thermal conductivity from 0.580 to 0.886 Wm-1 K-1. Negative Seebeck coefficient was observed for all the samples, indicating that the likely charge carrier was electron, which was confirmed by the Hall-effect measurements. The absolute value of the Seebeck coefficient was 12-15 μV/K at 300 K and increased approximately linearly with temperature in the measured range up to 550 K. The attainable ZT so far was 0.034 at 550 K and would rise to 0.15 at 1000 K, which was comparable to the values of other promising n-type oxide thermoelectrics currently under development, such as Nb/La-doped SrTiO3 and Al-doped ZnO.",
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Sol-gel synthesis and characterisation of nanostructured LaNiO3-x for thermoelectric applications. / Hsiao, Chun Lung; Chang, Wei Che; Qi, Xiao-Ding.

In: Science of Advanced Materials, Vol. 6, No. 7, 01.01.2014, p. 1406-1411.

Research output: Contribution to journalArticle

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