Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn3Ta2O5 Layer

Chia Hsun Chen; Ching Ting Lee

doi:10.1109/LPT.2015.2443502

Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn₃Ta₂O₅ Layer

Chia Hsun Chen
, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO₃ and heterostructured n-ZnO:In/i-Zn₃Ta₂O₅/p-ZnO:LiNO₃ on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10^-12Ω compared with 7.94× 10^-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn₃Ta₂O₅/p-ZnO:LiNO₃ ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10^-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn₃Ta₂O₅ absorption layer and the PEC oxidation method.

Original language	English
Article number	7120909
Pages (from-to)	1817-1820
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2015.2443502
Publication status	Published - 2015 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2015.2443502

Cite this

@article{7878f506420a43799b2ed2aa30bf9820,

title = "Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn3Ta2O5 Layer",

abstract = "The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10-12Ω compared with 7.94× 10-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.",

author = "Chen, \{Chia Hsun\} and Lee, \{Ching Ting\}",

year = "2015",

month = sep,

day = "1",

doi = "10.1109/LPT.2015.2443502",

language = "English",

volume = "27",

pages = "1817--1820",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "17",

}

TY - JOUR

T1 - Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn3Ta2O5 Layer

AU - Chen, Chia Hsun

AU - Lee, Ching Ting

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10-12Ω compared with 7.94× 10-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.

AB - The vapor cooling condensation system was utilized to deposit the homostructured n-ZnO:In/i-ZnO/p-ZnO:LiNO3 and heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 on sapphire substrates. The zero bias dynamic resistance of the latter ones was improved to 2.43× 10-12Ω compared with 7.94× 10-11 Ω of the former ones. Using the photoelectrochemical (PEC) oxidation method to treat the heterostructured n-ZnO:In/i-Zn3Ta2O5/p-ZnO:LiNO3 ultraviolet photodetectors, the zero bias dynamic resistance was further improved to 6.02× 10-12 Ω. The sensing and the noise performances of the ultraviolet photodetectors were effectively improved by the Zn3Ta2O5 absorption layer and the PEC oxidation method.

UR - https://www.scopus.com/pages/publications/84938563048

UR - https://www.scopus.com/pages/publications/84938563048#tab=citedBy

U2 - 10.1109/LPT.2015.2443502

DO - 10.1109/LPT.2015.2443502

M3 - Article

SN - 1041-1135

VL - 27

SP - 1817

EP - 1820

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 17

M1 - 7120909

ER -

Solar Blind Ultraviolet Photodetectors with High Dynamic Resistance Using Zn₃Ta₂O₅ Layer

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this