Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)

D. Y.C. Lie, J. H. Song, M. A. Nicolet, N. D. Theodore, J. Candelaria, S. G. Thomas, M. O. Tanner, K. L. Wang

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