Abstract
The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.
Original language | English |
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Pages (from-to) | 247-252 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 339 |
DOIs | |
Publication status | Published - 1994 Jan 1 |
Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: 1994 Apr 4 → 1994 Apr 8 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering