Solid-phase reaction of tungsten thin films with polycrystalline diamond

A. Bachli, Jen-Sue Chen, R. P. Ruiz, M. A. Nicolet

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.

Original languageEnglish
Pages (from-to)247-252
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume339
Publication statusPublished - 1994 Dec 1
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1994 Apr 41994 Apr 8

Fingerprint

Tungsten
Diamond
solid phases
Diamonds
tungsten
diamonds
Annealing
Thin films
annealing
thin films
Oxygen
oxygen
Backscattering
Spectrometry
Chemical vapor deposition
backscattering
x ray diffraction
Diffraction
vapor deposition
Vacuum

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Solid-phase reaction of tungsten thin films with polycrystalline diamond",
abstract = "The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.{\%} oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1{\%}. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.",
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Solid-phase reaction of tungsten thin films with polycrystalline diamond. / Bachli, A.; Chen, Jen-Sue; Ruiz, R. P.; Nicolet, M. A.

In: Materials Research Society Symposium - Proceedings, Vol. 339, 01.12.1994, p. 247-252.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Solid-phase reaction of tungsten thin films with polycrystalline diamond

AU - Bachli, A.

AU - Chen, Jen-Sue

AU - Ruiz, R. P.

AU - Nicolet, M. A.

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N2 - The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.

AB - The thermally induced solid-phase reaction of 135 nm thick sputter-deposited W films with polycrystalline CVD-grown diamond substrates is investigated. The samples are annealed in vacuum (5×10-7 torr) at temperatures between 700 °C and 1100 °C for 1 hour and examined by 2 MeV 4He++ backscattering spectrometry, x-ray diffraction, and scanning electron microscopy. The as-deposited W films contain roughly 5 at.% oxygen. After annealing the samples at 800 °C this oxygen concentration falls below the detection limit of less than 1%. Incipient W2C phase formation occurs during annealing at 900 °C. The final state, the WC phase, is reached after annealing at 1100 °C.

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