Spectral and spatial luminescence distribution of m-plane ZnO epitaxial films containing stacking faults: A cathodoluminescence study

Wan Hsien Lin; Uwe Jahn; Holger T. Grahn; Liuwen Chang; Mitch M.C. Chou; Jih Jen Wu

doi:10.7567/APEX.6.061101

Spectral and spatial luminescence distribution of m-plane ZnO epitaxial films containing stacking faults: A cathodoluminescence study

Wan Hsien Lin, Uwe Jahn, Holger T. Grahn, Liuwen Chang, Mitch M.C. Chou, Jih Jen Wu

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The luminescence of stacking faults (SFs) in m-plane ZnO epilayers grown by metal organic chemical vapor deposition is analyzed using spatially resolved cathodoluminescence (CL) spectroscopy. Complementary features observed in CL images for detection energies of 3.379 (near-bandedge) and 3.324 eV confirm the latter to be a typical SF-associated luminescence. A clear blue shift of the SF-associated luminescence is observed when the electron beam approaches the SF. This experimental result proves the existence of a polarization field in the SFs along the c-axis of the ZnO film. Furthermore, we clearly identify the SF-related transition at low temperatures and at room temperature.

Original language	English
Article number	061101
Journal	Applied Physics Express
Volume	6
Issue number	6
DOIs	https://doi.org/10.7567/APEX.6.061101
Publication status	Published - 2013 Jun 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Spectral and spatial luminescence distribution of m-plane ZnO epitaxial films containing stacking faults: A cathodoluminescence study",

abstract = "The luminescence of stacking faults (SFs) in m-plane ZnO epilayers grown by metal organic chemical vapor deposition is analyzed using spatially resolved cathodoluminescence (CL) spectroscopy. Complementary features observed in CL images for detection energies of 3.379 (near-bandedge) and 3.324 eV confirm the latter to be a typical SF-associated luminescence. A clear blue shift of the SF-associated luminescence is observed when the electron beam approaches the SF. This experimental result proves the existence of a polarization field in the SFs along the c-axis of the ZnO film. Furthermore, we clearly identify the SF-related transition at low temperatures and at room temperature.",

author = "Lin, {Wan Hsien} and Uwe Jahn and Grahn, {Holger T.} and Liuwen Chang and Chou, {Mitch M.C.} and Wu, {Jih Jen}",

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T1 - Spectral and spatial luminescence distribution of m-plane ZnO epitaxial films containing stacking faults

T2 - A cathodoluminescence study

AU - Lin, Wan Hsien

AU - Jahn, Uwe

AU - Grahn, Holger T.

AU - Chang, Liuwen

AU - Chou, Mitch M.C.

AU - Wu, Jih Jen

PY - 2013/6/1

Y1 - 2013/6/1

N2 - The luminescence of stacking faults (SFs) in m-plane ZnO epilayers grown by metal organic chemical vapor deposition is analyzed using spatially resolved cathodoluminescence (CL) spectroscopy. Complementary features observed in CL images for detection energies of 3.379 (near-bandedge) and 3.324 eV confirm the latter to be a typical SF-associated luminescence. A clear blue shift of the SF-associated luminescence is observed when the electron beam approaches the SF. This experimental result proves the existence of a polarization field in the SFs along the c-axis of the ZnO film. Furthermore, we clearly identify the SF-related transition at low temperatures and at room temperature.

AB - The luminescence of stacking faults (SFs) in m-plane ZnO epilayers grown by metal organic chemical vapor deposition is analyzed using spatially resolved cathodoluminescence (CL) spectroscopy. Complementary features observed in CL images for detection energies of 3.379 (near-bandedge) and 3.324 eV confirm the latter to be a typical SF-associated luminescence. A clear blue shift of the SF-associated luminescence is observed when the electron beam approaches the SF. This experimental result proves the existence of a polarization field in the SFs along the c-axis of the ZnO film. Furthermore, we clearly identify the SF-related transition at low temperatures and at room temperature.

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Spectral and spatial luminescence distribution of m-plane ZnO epitaxial films containing stacking faults: A cathodoluminescence study

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