Spectroscopic characterization of β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films by XPS and XAS

F. Esaka, H. Yamamoto, H. Udono, N. Matsubayashi, K. Yamaguchi, S. Shamoto, M. Magara, T. Kimura

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial β-FeSi 2 films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous β-FeSi 2 films can be grown on the β-FeSi 2 single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states of β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films, which is important to reveal optimized growth conditions of homoepitaxial films.

Original languageEnglish
Pages (from-to)2950-2954
Number of pages5
JournalApplied Surface Science
Volume257
Issue number7
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Spectroscopic characterization of β-FeSi <sub>2</sub> single crystals and homoepitaxial β-FeSi <sub>2</sub> films by XPS and XAS'. Together they form a unique fingerprint.

Cite this