Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

H. Ahn; C. H. Shen; C. L. Wu; S. Gwo

doi:10.1063/1.1929097

Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

H. Ahn, C. H. Shen, C. L. Wu, S. Gwo

Department of Physics

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51 Citations (Scopus)

Abstract

Spectroscopic ellipsometry (SE) has been performed to determine the optical properties of the InN epitaxial films grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. In addition to SE, cross-sectional transmission electron microscopy and x-ray diffraction reveal that epitaxially grown InN epilayer is homogeneous with high crystalline quality and does not include any metallic In. SE results analyzed by the Adachi's model for the dielectric function of InN show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which is determined by the thickness of the AlN buffer layer.

Original language	English
Article number	201905
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1929097
Publication status	Published - 2005 May 16

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1929097

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title = "Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations",

abstract = "Spectroscopic ellipsometry (SE) has been performed to determine the optical properties of the InN epitaxial films grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. In addition to SE, cross-sectional transmission electron microscopy and x-ray diffraction reveal that epitaxially grown InN epilayer is homogeneous with high crystalline quality and does not include any metallic In. SE results analyzed by the Adachi's model for the dielectric function of InN show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which is determined by the thickness of the AlN buffer layer.",

author = "H. Ahn and Shen, {C. H.} and Wu, {C. L.} and S. Gwo",

note = "Funding Information: This work was partly supported by the National Science Council, Taiwan (Grant No. NSC 93-2112-M-007-010). The authors acknowledge Professor T. M. Hsu of National Central University for the Hall measurements. ",

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doi = "10.1063/1.1929097",

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T1 - Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

AU - Ahn, H.

AU - Shen, C. H.

AU - Wu, C. L.

AU - Gwo, S.

N1 - Funding Information: This work was partly supported by the National Science Council, Taiwan (Grant No. NSC 93-2112-M-007-010). The authors acknowledge Professor T. M. Hsu of National Central University for the Hall measurements.

PY - 2005/5/16

Y1 - 2005/5/16

N2 - Spectroscopic ellipsometry (SE) has been performed to determine the optical properties of the InN epitaxial films grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. In addition to SE, cross-sectional transmission electron microscopy and x-ray diffraction reveal that epitaxially grown InN epilayer is homogeneous with high crystalline quality and does not include any metallic In. SE results analyzed by the Adachi's model for the dielectric function of InN show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which is determined by the thickness of the AlN buffer layer.

AB - Spectroscopic ellipsometry (SE) has been performed to determine the optical properties of the InN epitaxial films grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. In addition to SE, cross-sectional transmission electron microscopy and x-ray diffraction reveal that epitaxially grown InN epilayer is homogeneous with high crystalline quality and does not include any metallic In. SE results analyzed by the Adachi's model for the dielectric function of InN show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which is determined by the thickness of the AlN buffer layer.

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Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations

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