Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts

Inga A. Fischer, Li Te Chang, Christoph Sürgers, Stefano Chiussi, Kang L. Wang, Jörg Schulze

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages113-114
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: 2014 Jun 22014 Jun 4

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Conference

Conference7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/TerritorySingapore
CitySingapore
Period14-06-0214-06-04

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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