Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts

Inga A. Fischer; Li Te Chang; Christoph Sürgers; Stefano Chiussi; Kang L. Wang; Jörg Schulze

doi:10.1109/ISTDM.2014.6874647

Spin accumulation in n-Ge on Si with sputtered Mn₅Ge ₃C_0.8-contacts

Inga A. Fischer
, Li Te Chang
, Christoph Sürgers
, Stefano Chiussi
, Kang L. Wang
, Jörg Schulze

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate electrical injection of spin-polarized electrons from sputtered Mn₅Ge₃C_0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	113-114
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874647
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: 2014 Jun 2 → 2014 Jun 4

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Conference

Conference	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/Territory	Singapore
City	Singapore
Period	14-06-02 → 14-06-04

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874647

Cite this

Fischer, I. A., Chang, L. T., Sürgers, C., Chiussi, S., Wang, K. L., & Schulze, J. (2014). Spin accumulation in n-Ge on Si with sputtered Mn₅Ge ₃C_0.8-contacts. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 113-114). Article 6874647 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874647

@inproceedings{7edf4333632242528217e553ad53d944,

title = "Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts",

abstract = "We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.",

author = "Fischer, \{Inga A.\} and Chang, \{Li Te\} and Christoph S{\"u}rgers and Stefano Chiussi and Wang, \{Kang L.\} and J{\"o}rg Schulze",

year = "2014",

doi = "10.1109/ISTDM.2014.6874647",

language = "English",

isbn = "9781479954285",

series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

publisher = "IEEE Computer Society",

pages = "113--114",

booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

address = "United States",

note = "7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",

}

Fischer, IA, Chang, LT, Sürgers, C, Chiussi, S, Wang, KL & Schulze, J 2014, Spin accumulation in n-Ge on Si with sputtered Mn₅Ge ₃C_0.8-contacts. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874647, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 113-114, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 14-06-02. https://doi.org/10.1109/ISTDM.2014.6874647

Spin accumulation in n-Ge on Si with sputtered Mn₅Ge ₃C_0.8-contacts. / Fischer, Inga A.; Chang, Li Te; Sürgers, Christoph et al.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 113-114 6874647 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Spin accumulation in n-Ge on Si with sputtered Mn5Ge 3C0.8-contacts

AU - Fischer, Inga A.

AU - Chang, Li Te

AU - Sürgers, Christoph

AU - Chiussi, Stefano

AU - Wang, Kang L.

AU - Schulze, Jörg

PY - 2014

Y1 - 2014

N2 - We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.

AB - We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.

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DO - 10.1109/ISTDM.2014.6874647

M3 - Conference contribution

AN - SCOPUS:84906668843

SN - 9781479954285

T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

SP - 113

EP - 114

BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

PB - IEEE Computer Society

T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Y2 - 2 June 2014 through 4 June 2014

ER -

Fischer IA, Chang LT, Sürgers C, Chiussi S, Wang KL, Schulze J. Spin accumulation in n-Ge on Si with sputtered Mn₅Ge ₃C_0.8-contacts. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 113-114. 6874647. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). doi: 10.1109/ISTDM.2014.6874647