Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity

Y. Y. Liao, Y. N. Chen, D. S. Chuu, T. Brandes

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulklike systems is obtained by varying the width of the slab.

Original languageEnglish
Article number085310
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number8
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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