Spin transport in Ge nanowires for diluted magnetic semiconductor-based nonvolatile transpinor

Jianshi Tang, Tianxiao Nie, Kang L. Wang

Research output: Contribution to journalConference articlepeer-review

26 Citations (Scopus)


Spintronic devices, in particular spin field-effect transistors (spinFETs), have been researched for decades as a promising candidate to replace Si transistors with potentially low power dissipation and low variability. In this paper, we propose a nonvolatile spin-base transistor (transpinor) based on diluted magnetic semiconductor (DMS) with electric field-controlled paramagnetism-to-ferromagnetism phase transition. To realize the transpinor, we demonstrate the electrical spin injection into Ge nanowires using both ferromagnetic Mn5Ge3 Schottky contacts and Fe/MgO tunnel junctions. We observe much longer spin lifetimes and diffusion lengths in Ge nanowires compared with bulk Ge. Furthermore, we successfully grow the single-crystalline MnxGe1-x DMS nanowires using pattern-assisted molecular beam epitaxy (MBE). The MnxGe1-x nanowires exhibit a Curie temperature above 400 K, and the ferromagnetism can be further modulated by an external gate voltage. The demonstrated electric field-controlled ferromagnetism, along with the successful spin injection into Ge nanowires, paves the road to build the proposed transpinor.

Original languageEnglish
Pages (from-to)613-623
Number of pages11
JournalECS Transactions
Issue number6
Publication statusPublished - 2014
Event6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

All Science Journal Classification (ASJC) codes

  • General Engineering


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