Spintronic devices for low energy dissipation

Kang L. Wang; Hao Wu; Seyed Armin Razavi; Qiming Shao

doi:10.1109/IEDM.2018.8614671

Spintronic devices for low energy dissipation

Kang L. Wang
, Hao Wu
, Seyed Armin Razavi
, Qiming Shao

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

Spintronic devices are considered as one of the best candidates for next-generation electronics to complement CMOS technology. First, we will briefly show the recent progresses on spintronic devices based on spin-transfer torque, spin-orbit torque and voltage-controlled magnetic anisotropy in reference to energy efficient applications. We will then discuss the recent progresses using antiferromagnets and topological insulators for applications in memory, logic and circuits. Finally, the new prospective of 2D materials for spintronic devices will be addressed.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	36.2.1-36.2.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614671
Publication status	Published - 2018 Jul 2
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 2018 Dec 1 → 2018 Dec 5

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	18-12-01 → 18-12-05

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2018.8614671

Cite this

Wang, K. L., Wu, H., Razavi, S. A., & Shao, Q. (2018). Spintronic devices for low energy dissipation. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 36.2.1-36.2.4). Article 8614671 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614671

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title = "Spintronic devices for low energy dissipation",

abstract = "Spintronic devices are considered as one of the best candidates for next-generation electronics to complement CMOS technology. First, we will briefly show the recent progresses on spintronic devices based on spin-transfer torque, spin-orbit torque and voltage-controlled magnetic anisotropy in reference to energy efficient applications. We will then discuss the recent progresses using antiferromagnets and topological insulators for applications in memory, logic and circuits. Finally, the new prospective of 2D materials for spintronic devices will be addressed.",

author = "Wang, \{Kang L.\} and Hao Wu and Razavi, \{Seyed Armin\} and Qiming Shao",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/IEDM.2018.8614671",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

address = "United States",

}

Wang, KL, Wu, H, Razavi, SA & Shao, Q 2018, Spintronic devices for low energy dissipation. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614671, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 36.2.1-36.2.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 18-12-01. https://doi.org/10.1109/IEDM.2018.8614671

Spintronic devices for low energy dissipation. / Wang, Kang L.; Wu, Hao; Razavi, Seyed Armin et al.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 36.2.1-36.2.4 8614671 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Spintronic devices for low energy dissipation

AU - Wang, Kang L.

AU - Wu, Hao

AU - Razavi, Seyed Armin

AU - Shao, Qiming

PY - 2018/7/2

Y1 - 2018/7/2

N2 - Spintronic devices are considered as one of the best candidates for next-generation electronics to complement CMOS technology. First, we will briefly show the recent progresses on spintronic devices based on spin-transfer torque, spin-orbit torque and voltage-controlled magnetic anisotropy in reference to energy efficient applications. We will then discuss the recent progresses using antiferromagnets and topological insulators for applications in memory, logic and circuits. Finally, the new prospective of 2D materials for spintronic devices will be addressed.

AB - Spintronic devices are considered as one of the best candidates for next-generation electronics to complement CMOS technology. First, we will briefly show the recent progresses on spintronic devices based on spin-transfer torque, spin-orbit torque and voltage-controlled magnetic anisotropy in reference to energy efficient applications. We will then discuss the recent progresses using antiferromagnets and topological insulators for applications in memory, logic and circuits. Finally, the new prospective of 2D materials for spintronic devices will be addressed.

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DO - 10.1109/IEDM.2018.8614671

M3 - Conference contribution

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 36.2.1-36.2.4

BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018

Y2 - 1 December 2018 through 5 December 2018

ER -

Spintronic devices for low energy dissipation

Abstract

Publication series

Conference

UN SDGs

All Science Journal Classification (ASJC) codes

Access to Document

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