Abstract
High quality diamond films have been deposited on silicon and sapphire by means of a combined hot filament/electron beam/plasma-assisted chemical vapor deposition technique. A spiral tantalum foil is used as the hot cathode to generate a high-current dc discharge at a low sustaining voltage. Gas mixtures consisting of methane, hydrogen, and argon flowing through the spiral cathode towards the anode are effectively decomposed by the hot cathode and the high-density plasma. Diamond particles and films, grown at a rate between 0.5 and 5 μm/h, have been characterized by scanning electron microscopy, x-ray diffraction, and Raman spectroscopy.
Original language | English |
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Pages (from-to) | 2326-2327 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 53 |
Issue number | 23 |
DOIs | |
Publication status | Published - 1988 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)