Split-gate organic field effect transistors: Control over charge injection and transport

Bang-Yu Hsu, Ebinazar B. Namdas, Jonathan D. Yuen, Shinuk Cho, Ifor D.W. Samuel, Alan J. Heeger

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.

Original languageEnglish
Pages (from-to)4649-4653
Number of pages5
JournalAdvanced Materials
Volume22
Issue number41
DOIs
Publication statusPublished - 2010 Nov 2

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Split-gate organic field effect transistors: Control over charge injection and transport'. Together they form a unique fingerprint.

  • Cite this

    Hsu, B-Y., Namdas, E. B., Yuen, J. D., Cho, S., Samuel, I. D. W., & Heeger, A. J. (2010). Split-gate organic field effect transistors: Control over charge injection and transport. Advanced Materials, 22(41), 4649-4653. https://doi.org/10.1002/adma.201001509