Split-gate organic field effect transistors: Control over charge injection and transport

Ben B.Y. Hsu; Ebinazar B. Namdas; Jonathan D. Yuen; Shinuk Cho; Ifor D.W. Samuel; Alan J. Heeger

doi:10.1002/adma.201001509

Split-gate organic field effect transistors: Control over charge injection and transport

Ben B.Y. Hsu, Ebinazar B. Namdas, Jonathan D. Yuen, Shinuk Cho, Ifor D.W. Samuel, Alan J. Heeger

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.

Original language	English
Pages (from-to)	4649-4653
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	41
DOIs	https://doi.org/10.1002/adma.201001509
Publication status	Published - 2010 Nov 2

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201001509

Cite this

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title = "Split-gate organic field effect transistors: Control over charge injection and transport",

abstract = "A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.",

author = "Hsu, {Ben B.Y.} and Namdas, {Ebinazar B.} and Yuen, {Jonathan D.} and Shinuk Cho and Samuel, {Ifor D.W.} and Heeger, {Alan J.}",

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AU - Hsu, Ben B.Y.

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AU - Yuen, Jonathan D.

AU - Cho, Shinuk

AU - Samuel, Ifor D.W.

AU - Heeger, Alan J.

PY - 2010/11/2

Y1 - 2010/11/2

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Split-gate organic field effect transistors: Control over charge injection and transport

Abstract

All Science Journal Classification (ASJC) codes

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