Spontaneous Formation of an Ideal-Like Field-Effect Channel for Decay-Free Polymeric Thin-Film Transistors by Multiple-Scale Phase Separation

Horng Long Cheng, Jr Wei Lin, Jrjeng Ruan, Chia Hsien Lin, Fu Chiao Wu, Wei Yang Chou, Ching Hsiang Chen, Chung Kai Chang, Hwo Shuenn Sheu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We demonstrate semiconducting polymer-based thin-film transistors (PTFTs) with fast switching performance and an uncommon nondecaying feature. These PTFTs based on widely studied poly(3-hexylthiophene) are developed by incorporating the insulating polymer into the active channel and subjecting the compound to specific, spontaneous multiple-scale phase separation (MSPS). An in-depth study is conducted on the interfacial and phase-separated microstructure of the semiconducting/insulating blending active layer and its effect on the electrical characteristics of PTFTs. The polyblends exhibit a confined crystallization behavior with continuously semiconducting crystalline domains between scattered insulator-rich domains. The insulator-rich domains can block leakage current and strengthen the gate control of the channel. A small amount of the insulating polymer penetrates the bottom of the active channel, resulting in effective interface modification. We show specific MSPS morphology of the present blending films to reduce charge trapping effects, enhance charge accumulation, and create a high-seed switching channel. The findings enable us to develop the required morphological conceptual model of the ideal-like field-effect-modulated polymer-based active channel. The polyblend-based PTFTs with MSPS morphology also have promising sensing functions. This study offers an effective approach for overcoming the major drawbacks (instability and poor switching) of PTFTs, thus allowing such transistors to have potential applications.

Original languageEnglish
Pages (from-to)16486-16494
Number of pages9
JournalACS Applied Materials and Interfaces
Volume7
Issue number30
DOIs
Publication statusPublished - 2015 Aug 5

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Thin film transistors
Polymer films
Phase separation
Polymers
Semiconducting polymers
Charge trapping
Crystallization
Leakage currents
Seed
Transistors
Crystalline materials
Microstructure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "We demonstrate semiconducting polymer-based thin-film transistors (PTFTs) with fast switching performance and an uncommon nondecaying feature. These PTFTs based on widely studied poly(3-hexylthiophene) are developed by incorporating the insulating polymer into the active channel and subjecting the compound to specific, spontaneous multiple-scale phase separation (MSPS). An in-depth study is conducted on the interfacial and phase-separated microstructure of the semiconducting/insulating blending active layer and its effect on the electrical characteristics of PTFTs. The polyblends exhibit a confined crystallization behavior with continuously semiconducting crystalline domains between scattered insulator-rich domains. The insulator-rich domains can block leakage current and strengthen the gate control of the channel. A small amount of the insulating polymer penetrates the bottom of the active channel, resulting in effective interface modification. We show specific MSPS morphology of the present blending films to reduce charge trapping effects, enhance charge accumulation, and create a high-seed switching channel. The findings enable us to develop the required morphological conceptual model of the ideal-like field-effect-modulated polymer-based active channel. The polyblend-based PTFTs with MSPS morphology also have promising sensing functions. This study offers an effective approach for overcoming the major drawbacks (instability and poor switching) of PTFTs, thus allowing such transistors to have potential applications.",
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Spontaneous Formation of an Ideal-Like Field-Effect Channel for Decay-Free Polymeric Thin-Film Transistors by Multiple-Scale Phase Separation. / Cheng, Horng Long; Lin, Jr Wei; Ruan, Jrjeng; Lin, Chia Hsien; Wu, Fu Chiao; Chou, Wei Yang; Chen, Ching Hsiang; Chang, Chung Kai; Sheu, Hwo Shuenn.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 30, 05.08.2015, p. 16486-16494.

Research output: Contribution to journalArticle

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AU - Cheng, Horng Long

AU - Lin, Jr Wei

AU - Ruan, Jrjeng

AU - Lin, Chia Hsien

AU - Wu, Fu Chiao

AU - Chou, Wei Yang

AU - Chen, Ching Hsiang

AU - Chang, Chung Kai

AU - Sheu, Hwo Shuenn

PY - 2015/8/5

Y1 - 2015/8/5

N2 - We demonstrate semiconducting polymer-based thin-film transistors (PTFTs) with fast switching performance and an uncommon nondecaying feature. These PTFTs based on widely studied poly(3-hexylthiophene) are developed by incorporating the insulating polymer into the active channel and subjecting the compound to specific, spontaneous multiple-scale phase separation (MSPS). An in-depth study is conducted on the interfacial and phase-separated microstructure of the semiconducting/insulating blending active layer and its effect on the electrical characteristics of PTFTs. The polyblends exhibit a confined crystallization behavior with continuously semiconducting crystalline domains between scattered insulator-rich domains. The insulator-rich domains can block leakage current and strengthen the gate control of the channel. A small amount of the insulating polymer penetrates the bottom of the active channel, resulting in effective interface modification. We show specific MSPS morphology of the present blending films to reduce charge trapping effects, enhance charge accumulation, and create a high-seed switching channel. The findings enable us to develop the required morphological conceptual model of the ideal-like field-effect-modulated polymer-based active channel. The polyblend-based PTFTs with MSPS morphology also have promising sensing functions. This study offers an effective approach for overcoming the major drawbacks (instability and poor switching) of PTFTs, thus allowing such transistors to have potential applications.

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