Sputter etching effect of the substrate on the microstructure of β-FeSi2 thin film prepared by ion beam sputter deposition method

M. Sasase, K. Shimura, K. Yamaguchi, H. Yamamoto, S. Shamoto, K. Hojou

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Beta iron disilicide (β-FeSi2) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. β-FeSi2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne+. In the present study, the sputter etching effect on the substrate was investigated through the cross-sectional observation of transmission electron microscopy (TEM) in order to find the conditions for fabricating uniform β-FeSi2 films which have high orientation and form a smooth interface with the substrate. Nanostructural changes of the deposited film and the interface were observed as a function of sputter Ne+ energy and fluence. It was found from the observed crystal structure of the films and interface that the effect of the surface pre-treatment significantly changes with the ion energy and fluence. By 1 keV irradiation at the fluence of 3 × 1016 ions/cm2, β-FeSi2 film was epitaxially grown on Si(1 0 0) substrate with an atomically smooth interface.

Original languageEnglish
Pages (from-to)186-189
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint

Dive into the research topics of 'Sputter etching effect of the substrate on the microstructure of β-FeSi2 thin film prepared by ion beam sputter deposition method'. Together they form a unique fingerprint.

Cite this