Beta iron disilicide (β-FeSi2) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. β-FeSi2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne+. In the present study, the sputter etching effect on the substrate was investigated through the cross-sectional observation of transmission electron microscopy (TEM) in order to find the conditions for fabricating uniform β-FeSi2 films which have high orientation and form a smooth interface with the substrate. Nanostructural changes of the deposited film and the interface were observed as a function of sputter Ne+ energy and fluence. It was found from the observed crystal structure of the films and interface that the effect of the surface pre-treatment significantly changes with the ion energy and fluence. By 1 keV irradiation at the fluence of 3 × 1016 ions/cm2, β-FeSi2 film was epitaxially grown on Si(1 0 0) substrate with an atomically smooth interface.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Issue number||1-2 SPEC. ISS.|
|Publication status||Published - 2007 Apr|
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics