Sputtered indium-tin-oxide on p-GaN

Shoou-Jinn Chang, C. H. Lan, J. D. Hwang, Y. C. Cheng, W. J. Lin, J. C. Lin, H. Z. Chen

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


To study plasma-induced damages, we directly sputtered indium-tin-oxide (ITO) films onto p-GaN and systematically studied the effects of sputter power on the electrical properties of ITO/p-GaN. It was found that plasma bombardment during sputtering will induce nitrogen vacancies and compensate acceptor concentration in p-GaN or even convert p-GaN into n-GaN. It was also found that annealing the samples at 600 and 700°C will generate more nitrogen vacancies and enhance rectifying behavior. Furthermore, it was found that 800°C annealing could effectively recover the plasma-induced nitrogen vacancies and/or traps.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number2
Publication statusPublished - 2008 Jan 4

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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