To study plasma-induced damages, we directly sputtered indium-tin-oxide (ITO) films onto p-GaN and systematically studied the effects of sputter power on the electrical properties of ITO/p-GaN. It was found that plasma bombardment during sputtering will induce nitrogen vacancies and compensate acceptor concentration in p-GaN or even convert p-GaN into n-GaN. It was also found that annealing the samples at 600 and 700°C will generate more nitrogen vacancies and enhance rectifying behavior. Furthermore, it was found that 800°C annealing could effectively recover the plasma-induced nitrogen vacancies and/or traps.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry