SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives

Jian Geng Li, Guan Yu Chen, Hsung Pin Chang, Da-Wei Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56% by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.

Original languageEnglish
Title of host publicationICEIC 2019 - International Conference on Electronics, Information, and Communication
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9788995004449
DOIs
Publication statusPublished - 2019 May 3
Event18th International Conference on Electronics, Information, and Communication, ICEIC 2019 - Auckland, New Zealand
Duration: 2019 Jan 222019 Jan 25

Publication series

NameICEIC 2019 - International Conference on Electronics, Information, and Communication

Conference

Conference18th International Conference on Electronics, Information, and Communication, ICEIC 2019
CountryNew Zealand
CityAuckland
Period19-01-2219-01-25

Fingerprint

Flash-based SSDs
Flash memory

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Li, J. G., Chen, G. Y., Chang, H. P., & Chang, D-W. (2019). SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives. In ICEIC 2019 - International Conference on Electronics, Information, and Communication [8706493] (ICEIC 2019 - International Conference on Electronics, Information, and Communication). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2019.8706493
Li, Jian Geng ; Chen, Guan Yu ; Chang, Hsung Pin ; Chang, Da-Wei. / SSKIP : Lifetime aware page skipping for multi-level cell flash-based solid-state drives. ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc., 2019. (ICEIC 2019 - International Conference on Electronics, Information, and Communication).
@inproceedings{7e3cebc892e0468c830743fa8d51ee84,
title = "SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives",
abstract = "NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56{\%} by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.",
author = "Li, {Jian Geng} and Chen, {Guan Yu} and Chang, {Hsung Pin} and Da-Wei Chang",
year = "2019",
month = "5",
day = "3",
doi = "10.23919/ELINFOCOM.2019.8706493",
language = "English",
series = "ICEIC 2019 - International Conference on Electronics, Information, and Communication",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "ICEIC 2019 - International Conference on Electronics, Information, and Communication",
address = "United States",

}

Li, JG, Chen, GY, Chang, HP & Chang, D-W 2019, SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives. in ICEIC 2019 - International Conference on Electronics, Information, and Communication., 8706493, ICEIC 2019 - International Conference on Electronics, Information, and Communication, Institute of Electrical and Electronics Engineers Inc., 18th International Conference on Electronics, Information, and Communication, ICEIC 2019, Auckland, New Zealand, 19-01-22. https://doi.org/10.23919/ELINFOCOM.2019.8706493

SSKIP : Lifetime aware page skipping for multi-level cell flash-based solid-state drives. / Li, Jian Geng; Chen, Guan Yu; Chang, Hsung Pin; Chang, Da-Wei.

ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc., 2019. 8706493 (ICEIC 2019 - International Conference on Electronics, Information, and Communication).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - SSKIP

T2 - Lifetime aware page skipping for multi-level cell flash-based solid-state drives

AU - Li, Jian Geng

AU - Chen, Guan Yu

AU - Chang, Hsung Pin

AU - Chang, Da-Wei

PY - 2019/5/3

Y1 - 2019/5/3

N2 - NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56% by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.

AB - NAND flash memory-based solid-state drives (SSDs) have been increasingly used in storage systems. Compared to single-level cell (SLC) NAND, which stores 1 bit per cell, multi-level cell (MLC) NAND stores 2 or more bits per cell, enabling higher-capacity and lower-cost SSDs. However, MLC NAND has inferior write performance compared to SLC NAND. A method to improve the write performance is to exploit the performance variability in MLC flash memory by skipping the slow pages (i.e., data writes always served by fast pages). However, excessive page skips cause the free space of the SSD to be consumed quickly, harmful to the SSD performance and lifetime. In this paper, a selective page skip mothed called SSKIP is proposed to improve the MLC write performance while maintaining the target SSD lifetime. According to the performance results, SSKIP can improve the performance by up to 56% by performing page skips. Moreover, it prevents violating the target lifetime warranty due to excessive page skips.

UR - http://www.scopus.com/inward/record.url?scp=85065878540&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065878540&partnerID=8YFLogxK

U2 - 10.23919/ELINFOCOM.2019.8706493

DO - 10.23919/ELINFOCOM.2019.8706493

M3 - Conference contribution

AN - SCOPUS:85065878540

T3 - ICEIC 2019 - International Conference on Electronics, Information, and Communication

BT - ICEIC 2019 - International Conference on Electronics, Information, and Communication

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Li JG, Chen GY, Chang HP, Chang D-W. SSKIP: Lifetime aware page skipping for multi-level cell flash-based solid-state drives. In ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc. 2019. 8706493. (ICEIC 2019 - International Conference on Electronics, Information, and Communication). https://doi.org/10.23919/ELINFOCOM.2019.8706493