Stability-Enhanced Resistive Random-Access Memory via Stacked InxGa1- xO by the RF Sputtering Method

Wei Lun Huang, Yong Zhe Lin, Sheng Po Chang, Wei Chih Lai, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The stability of a resistive random-access memory (RRAM) device over long-term use has been widely acknowledged as a pertinent concern. For investigating the stability of RRAM devices, a stacked InxGa1-xO structure is designed as its switching layer in this study. Each stacked structure in the switching layer, formed via sputtering, consists of varying contents of gallium, which is a suppressor of oxygen vacancies; thus, the oxygen vacancies are well controlled in each layer. When a stacked structure with layers of different contents is formed, the original gradients of concentration of oxygen vacancies and mobility influence the set and reset processes. With the stacked structure, an average set voltage of 0.76 V, an average reset voltage of -0.66 V, a coefficient of variation of set voltage of 0.34, and a coefficient of variation of reset voltage of 0.18 are obtained. Additionally, under DC sweeps, the stacked RRAM demonstrates a high operating life of more than 4000 cycles. In conclusion, the performance and stability of the RRAM are enhanced herein by adjusting the concentration of oxygen vacancies via different compositions of elements.

Original languageEnglish
Pages (from-to)10691-10697
Number of pages7
JournalACS Omega
Issue number16
Publication statusPublished - 2021 Apr 27

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering


Dive into the research topics of 'Stability-Enhanced Resistive Random-Access Memory via Stacked InxGa1- xO by the RF Sputtering Method'. Together they form a unique fingerprint.

Cite this