Stabilization of ZnO polar plane with charged surface nanodefects

Ju Hong Lai, Shu Hsuan Su, Hsin Hsien Chen, J. C.A. Huang, Chung Lin Wu

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Based on in situ scanning probe microscopy/spectroscopy, this study investigates the stabilization of Zn-terminated ZnO polar plane using surface defects. O-terminated surface defects on a nanometer scale, which have two morphologies, i.e., hexagonal cavities and small pits, are observed at the submonolayer depth on the (0001)-Zn surface by applying medium-energy Ar + bombardment (2.5 keV) at a high temperature (850°C). Experimental results indicate that the local electronic structure of O-terminated surface defects exhibits upward band bending with respect to the Zn-terminated surface, which is consistent with the observations made using Kevin probe microscopy, in which the ZnO polar surface has a locally reversed electrostatic field. Moreover, pair-distribution analysis indicates that the O-terminated surface defects with diameters below 0.9 nm are charged with one electron per pit, thus helping to compensate for the internal polarization.

Original languageEnglish
Article number155406
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number15
DOIs
Publication statusPublished - 2010 Oct 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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