Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

C. Y. Lu, E. Y. Chang, J. C. Huang, C. T. Chang, C. T. Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/ mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs.

Original languageEnglish
Pages (from-to)1348-1349
Number of pages2
JournalElectronics Letters
Volume45
Issue number25
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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