Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

C. Y. Lu; E. Y. Chang; J. C. Huang; C. T. Chang; C. T. Lee

doi:10.1049/el.2009.1643

Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

C. Y. Lu, E. Y. Chang, J. C. Huang, C. T. Chang, C. T. Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WN_x) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WN_x HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/ mm at 2 GHz. A combination of these findings indicates the robust performance of this WN_x material and its potential as a Schottky gate for AlGaN/GaN HEMTs.

Original language	English
Pages (from-to)	1348-1349
Number of pages	2
Journal	Electronics Letters
Volume	45
Issue number	25
DOIs	https://doi.org/10.1049/el.2009.1643
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el.2009.1643

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@article{d0ff9bd04bde428ab5052a4709303460,

title = "Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation",

abstract = "An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/ mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs.",

author = "Lu, {C. Y.} and Chang, {E. Y.} and Huang, {J. C.} and Chang, {C. T.} and Lee, {C. T.}",

year = "2009",

doi = "10.1049/el.2009.1643",

language = "English",

volume = "45",

pages = "1348--1349",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "25",

}

TY - JOUR

T1 - Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

AU - Lu, C. Y.

AU - Chang, E. Y.

AU - Huang, J. C.

AU - Chang, C. T.

AU - Lee, C. T.

PY - 2009

Y1 - 2009

N2 - An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/ mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs.

AB - An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/ mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs.

UR - http://www.scopus.com/inward/record.url?scp=72249089207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72249089207&partnerID=8YFLogxK

U2 - 10.1049/el.2009.1643

DO - 10.1049/el.2009.1643

M3 - Article

AN - SCOPUS:72249089207

SN - 0013-5194

VL - 45

SP - 1348

EP - 1349

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

Abstract

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