Stack gate technique for dopingless bulk FinFETs

Yi Bo Liao, Meng Hsueh Chiang, Yu Sheng Lai, Wei Chou Hsu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

FinFETs have been made successfully for mass manufacturing on bulk and silicon-on-insulator wafers. When choosing the bulk option, additional process steps are needed for substrate leakage suppression. Typically, heavy substrate doping for punchthrough stopping between the source and drain is used, but precise control of the doping profile to prevent its up-diffusion into the channel has been a challenging task, especially for continuously shrinking device dimension. In this paper, we propose a stack gate structure with doping-free substrate while punchthrough leakage can be suppressed. The proposed technique can be integrated in conventional gate-last high-k metal gate process. Both polysilicon and metal gates are shown to be feasible in the proposed stack gate based on 3-D TCAD simulation. In addition, the stack gate structure without substrate doping is immune to its random dopant fluctuations.

Original languageEnglish
Article number6755551
Pages (from-to)963-968
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume61
Issue number4
DOIs
Publication statusPublished - 2014 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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