TY - JOUR
T1 - Stacking-dependent magnetoelectronic properties in multilayer graphene
AU - Lin, Chiun Yan
AU - Wu, Jhao Ying
AU - Chiu, Yu Huang
AU - Chang, Cheng Pong
AU - Lin, Ming Fa
PY - 2014/11/25
Y1 - 2014/11/25
N2 - The generalized Peierls tight-binding model is developed to study multilayer graphenes. For an N-layer system, there are N groups of conduction and valence Landau levels. Each group is clearly specified by the corresponding sublattice. The Landau-level spectra strongly depend on the stacking configuration. ABC-stacked graphenes exhibit two kinds of Landau-level anticrossings, the intergroup and intragroup Landau levels, as a function of the applied magnetic field. On the other hand, in contrast to its frequent wide-energy presence in ABC-stacked graphenes, the anticrossing only occurs occasionally in AB-stacked graphenes, and is absent in AA-stacked graphenes. Furthermore, all 4N Dirac-point related Landau levels are distributed over a limited energy range near the Fermi level. In AA- and AB-stacked graphenes, the total number of such levels is fixed, while their energies depend on the stacking configuration. These results reflect the main features of the zero-field band structures.
AB - The generalized Peierls tight-binding model is developed to study multilayer graphenes. For an N-layer system, there are N groups of conduction and valence Landau levels. Each group is clearly specified by the corresponding sublattice. The Landau-level spectra strongly depend on the stacking configuration. ABC-stacked graphenes exhibit two kinds of Landau-level anticrossings, the intergroup and intragroup Landau levels, as a function of the applied magnetic field. On the other hand, in contrast to its frequent wide-energy presence in ABC-stacked graphenes, the anticrossing only occurs occasionally in AB-stacked graphenes, and is absent in AA-stacked graphenes. Furthermore, all 4N Dirac-point related Landau levels are distributed over a limited energy range near the Fermi level. In AA- and AB-stacked graphenes, the total number of such levels is fixed, while their energies depend on the stacking configuration. These results reflect the main features of the zero-field band structures.
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U2 - 10.1103/PhysRevB.90.205434
DO - 10.1103/PhysRevB.90.205434
M3 - Article
AN - SCOPUS:84915746316
SN - 1098-0121
VL - 90
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 205434
ER -