TY - GEN
T1 - Statistical compact modeling of variations in nano MOSFETs
AU - Lin, Chung Hsun
AU - Dunga, Mohan V.
AU - Lu, Darsen
AU - Niknejad, Ali M.
AU - Hu, Chenming
N1 - Funding Information:
The authors wish to thank M. Skouri for his help in the calculation of refractive indices and C. Schiller, of LEP (3, av. Descartes, 94450 Limeil-Brevannes) for the lattice-mismatch measurements by double X ray diffraction. This work has been supported by MIR, C.G.E. Marcoussis and DVAR.
PY - 2008
Y1 - 2008
N2 - We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (±σand ±2σ) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.
AB - We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (±σand ±2σ) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.
UR - http://www.scopus.com/inward/record.url?scp=49049101564&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=49049101564&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2008.4530849
DO - 10.1109/VTSA.2008.4530849
M3 - Conference contribution
AN - SCOPUS:49049101564
SN - 9781424416158
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 165
EP - 166
BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
T2 - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Y2 - 21 April 2008 through 23 April 2008
ER -