Abstract
The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.
| Original language | English |
|---|---|
| Pages (from-to) | 29-32 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: 1995 Dec 10 → 1995 Dec 13 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry