Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone-Fang Chen, Bruce W. McGaughy, Chenming Hu

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

Original languageEnglish
Pages (from-to)29-32
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability'. Together they form a unique fingerprint.

  • Cite this