Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Jone-Fang Chen, Bruce W. McGaughy, Chenming Hu

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

Original languageEnglish
Pages (from-to)29-32
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

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circuit reliability
digital electronics
Hot carriers
Carrier lifetime
Digital circuits
carrier lifetime
delay circuits
Delay circuits
statistical distributions
simulators
degradation
life (durability)
Simulators
Degradation
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.",
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Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability. / Chen, Jone-Fang; McGaughy, Bruce W.; Hu, Chenming.

In: Technical Digest - International Electron Devices Meeting, 01.12.1995, p. 29-32.

Research output: Contribution to journalConference article

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AU - McGaughy, Bruce W.

AU - Hu, Chenming

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N2 - The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

AB - The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability.

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