Strain distribution of mbe grown gexsi1-x/si layers by raman scattering

S. J. Chang; M. A. Kallel; K. L. Wang

doi:10.1117/12.947426

Strain distribution of mbe grown ge_xsi_1-x/si layers by raman scattering

S. J. Chang, M. A. Kallel, K. L. Wang

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Abstract

The strain distribution of strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick GexSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.

Original language	English
Pages (from-to)	163-168
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	946
DOIs	https://doi.org/10.1117/12.947426
Publication status	Published - 1988 Aug 9

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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abstract = "The strain distribution of strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick GexSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.",

author = "Chang, {S. J.} and Kallel, {M. A.} and Wang, {K. L.}",

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AU - Chang, S. J.

AU - Kallel, M. A.

AU - Wang, K. L.

PY - 1988/8/9

Y1 - 1988/8/9

N2 - The strain distribution of strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick GexSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.

AB - The strain distribution of strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick GexSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.

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JF - Proceedings of SPIE - The International Society for Optical Engineering

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Strain distribution of mbe grown ge_xsi_1-x/si layers by raman scattering

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