Strain distribution of mbe grown gexsi1-x/si layers by raman scattering

S. J. Chang, M. A. Kallel, K. L. Wang

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1 Citation (Scopus)


The strain distribution of strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick GexSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.

Original languageEnglish
Pages (from-to)163-168
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1988 Aug 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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