Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

Chuan Pu Liu; Peter D. Miller; William L. Henstrom; J. Murray Gibson

doi:10.1557/proc-571-49

Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

Chuan Pu Liu, Peter D. Miller, William L. Henstrom, J. Murray Gibson

Research output: Contribution to journal › Article › peer-review

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Abstract

We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

Original language	English
Pages (from-to)	49-54
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	571
DOIs	https://doi.org/10.1557/proc-571-49
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-571-49

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title = "Strain in coherent Ge quantum islands on si measured by transmission electron microscopy",

abstract = "We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent {"}abrupt displacement{"} approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.",

author = "Liu, {Chuan Pu} and Miller, {Peter D.} and Henstrom, {William L.} and Gibson, {J. Murray}",

year = "1999",

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AU - Liu, Chuan Pu

AU - Miller, Peter D.

AU - Henstrom, William L.

AU - Gibson, J. Murray

PY - 1999

Y1 - 1999

N2 - We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

AB - We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

Abstract

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