Strain in coherent Ge quantum islands on si measured by transmission electron microscopy

Chuan Pu Liu, Peter D. Miller, William L. Henstrom, J. Murray Gibson

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent "abrupt displacement" approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.

Original languageEnglish
Pages (from-to)49-54
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume571
DOIs
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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