Strained Si1-xGex graded channel PMOSFET grown by UHVCVD

Chia Yi Su, San Lein Wu, Shoou-Jinn Chang, Liang Po Chen

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

The experimental realization of a p-type Si/SiGe heterostructure metal oxide semiconductor field-effect transistor (HMOSFET) structure with a strained Si1-xGex graded well as the conducting channel is reported utilizing ultra-high-vacuum chemical vapor deposition (UHVCVD). The graded variation of the Ge fraction in channel can reduce the relaxation of strained SiGe epilayer. Simultaneously, rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films avoiding high thermal budgets which will cause the strain relaxation of graded Si1-xGex layer. The proposed device with a 0.5×100 μm2 gate exhibits a well-done transistor behavior. An extrinsic transconductance of 130 mS/mm at room temperature has been obtained.

Original languageEnglish
Pages (from-to)371-374
Number of pages4
JournalThin Solid Films
Volume369
Issue number1
DOIs
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

Fingerprint

Ultrahigh vacuum
ultrahigh vacuum
Chemical vapor deposition
vapor deposition
Strain relaxation
Epilayers
Transconductance
MOSFET devices
transconductance
metal oxide semiconductors
budgets
Oxide films
oxide films
Heterojunctions
Transistors
transistors
field effect transistors
conduction
Oxidation
oxidation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Su, Chia Yi ; Wu, San Lein ; Chang, Shoou-Jinn ; Chen, Liang Po. / Strained Si1-xGex graded channel PMOSFET grown by UHVCVD. In: Thin Solid Films. 2000 ; Vol. 369, No. 1. pp. 371-374.
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Strained Si1-xGex graded channel PMOSFET grown by UHVCVD. / Su, Chia Yi; Wu, San Lein; Chang, Shoou-Jinn; Chen, Liang Po.

In: Thin Solid Films, Vol. 369, No. 1, 03.07.2000, p. 371-374.

Research output: Contribution to journalConference article

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AU - Wu, San Lein

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AB - The experimental realization of a p-type Si/SiGe heterostructure metal oxide semiconductor field-effect transistor (HMOSFET) structure with a strained Si1-xGex graded well as the conducting channel is reported utilizing ultra-high-vacuum chemical vapor deposition (UHVCVD). The graded variation of the Ge fraction in channel can reduce the relaxation of strained SiGe epilayer. Simultaneously, rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films avoiding high thermal budgets which will cause the strain relaxation of graded Si1-xGex layer. The proposed device with a 0.5×100 μm2 gate exhibits a well-done transistor behavior. An extrinsic transconductance of 130 mS/mm at room temperature has been obtained.

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