Strained Si1-xGex graded channel PMOSFET grown by UHVCVD

Chia Yi Su, San Lein Wu, Shoou Jinn Chang, Liang Po Chen

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


The experimental realization of a p-type Si/SiGe heterostructure metal oxide semiconductor field-effect transistor (HMOSFET) structure with a strained Si1-xGex graded well as the conducting channel is reported utilizing ultra-high-vacuum chemical vapor deposition (UHVCVD). The graded variation of the Ge fraction in channel can reduce the relaxation of strained SiGe epilayer. Simultaneously, rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films avoiding high thermal budgets which will cause the strain relaxation of graded Si1-xGex layer. The proposed device with a 0.5×100 μm2 gate exhibits a well-done transistor behavior. An extrinsic transconductance of 130 mS/mm at room temperature has been obtained.

Original languageEnglish
Pages (from-to)371-374
Number of pages4
JournalThin Solid Films
Issue number1
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sept 121999 Sept 17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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