Strained Si1-xGex normal-graded channel p-type metal oxide semiconductor field effect transistor

Chia Yi Su; San Lein Wu; Shoou Jinn Chang; Liang Po Chen

doi:10.1143/jjap.39.l579

Strained Si_1-xGe_x normal-graded channel p-type metal oxide semiconductor field effect transistor

Chia Yi Su, San Lein Wu, Shoou Jinn Chang, Liang Po Chen

Research output: Contribution to journal › Article › peer-review

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Abstract

A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si_1-xGe_x layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si_1-xGe_x layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 μm has been obtained, which shows the great potential of this structure in Si-based device applications.

Original language	English
Pages (from-to)	L579-L581
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	6 B
DOIs	https://doi.org/10.1143/jjap.39.l579
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Strained Si1-xGex normal-graded channel p-type metal oxide semiconductor field effect transistor",

abstract = "A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si1-xGex layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si1-xGex layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 μm has been obtained, which shows the great potential of this structure in Si-based device applications.",

author = "Su, {Chia Yi} and Wu, {San Lein} and Chang, {Shoou Jinn} and Chen, {Liang Po}",

year = "2000",

doi = "10.1143/jjap.39.l579",

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AU - Su, Chia Yi

AU - Wu, San Lein

AU - Chang, Shoou Jinn

AU - Chen, Liang Po

PY - 2000

Y1 - 2000

N2 - A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si1-xGex layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si1-xGex layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 μm has been obtained, which shows the great potential of this structure in Si-based device applications.

AB - A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si1-xGex layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si1-xGex layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 μm has been obtained, which shows the great potential of this structure in Si-based device applications.

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Strained Si_1-xGe_x normal-graded channel p-type metal oxide semiconductor field effect transistor

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