A working p-type metal-oxide semiconductor field-effect transistor (MOSFET) structure, utilizing a graded-Si1-xGex layer as the conducting channel, has been successfully fabricated by ultra high-vacuum chemical vapor deposition (UHVCVD). Rapid thermal oxidation (RTO) was used to obtain a high-quality thin-gate oxide films and decrease the high thermal budget which results in the strain relaxation of the graded Si1-xGex layer. It is found that the proposed device exhibits suitable transistor characteristics. An extrinsic transconductance of 130 mS/mm at room temperature for a gate length of 0.6 μm has been obtained, which shows the great potential of this structure in Si-based device applications.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||6 B|
|Publication status||Published - 2000|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)