Stress and deflection in GaAs/Si layered heterostructures by improved laminate theory

T. C. Chen, H. C. Wu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


An improved laminate theory is proposed to calculate the stresses and curvatures in the multilayer anisotropic heterostructures of semiconductor materials with interfacial lattice misfit strain and dislocations. Some inconsistency in formulation of Nakajima's model is indicated and then this model is corrected based on two revised approaches, called global and local Nakajima's models, respectively. Comparisons are made between the results of two revised Nakajima's models and the improved laminate theory under isotropically elastic condition. Excellent agreement demonstrates the accuracy and efficiency of the improved laminate theory. Effects of anisotropic elasticity on stresses and curvature are also evaluated and discussed based on improved laminate theory.

Original languageEnglish
Pages (from-to)571-581
Number of pages11
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 1998 Mar 7

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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