TY - JOUR
T1 - Stress and deflection in GaAs/Si layered heterostructures by improved laminate theory
AU - Chen, T. C.
AU - Wu, H. C.
N1 - Funding Information:
The authors gratefully acknowledge the support of the National Science Council of Taiwan, ROC (Grant No. NSC 86-2212-E-006-065). The authors also wish to express their sincere gratitude for the help rendered by Professor C.I. Weng, National Cheng Kung University and Professor C.C. Hwang, Chung Yuan University.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1998/3/7
Y1 - 1998/3/7
N2 - An improved laminate theory is proposed to calculate the stresses and curvatures in the multilayer anisotropic heterostructures of semiconductor materials with interfacial lattice misfit strain and dislocations. Some inconsistency in formulation of Nakajima's model is indicated and then this model is corrected based on two revised approaches, called global and local Nakajima's models, respectively. Comparisons are made between the results of two revised Nakajima's models and the improved laminate theory under isotropically elastic condition. Excellent agreement demonstrates the accuracy and efficiency of the improved laminate theory. Effects of anisotropic elasticity on stresses and curvature are also evaluated and discussed based on improved laminate theory.
AB - An improved laminate theory is proposed to calculate the stresses and curvatures in the multilayer anisotropic heterostructures of semiconductor materials with interfacial lattice misfit strain and dislocations. Some inconsistency in formulation of Nakajima's model is indicated and then this model is corrected based on two revised approaches, called global and local Nakajima's models, respectively. Comparisons are made between the results of two revised Nakajima's models and the improved laminate theory under isotropically elastic condition. Excellent agreement demonstrates the accuracy and efficiency of the improved laminate theory. Effects of anisotropic elasticity on stresses and curvature are also evaluated and discussed based on improved laminate theory.
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U2 - 10.1016/S0022-0248(97)00816-6
DO - 10.1016/S0022-0248(97)00816-6
M3 - Article
AN - SCOPUS:0032046573
SN - 0022-0248
VL - 186
SP - 571
EP - 581
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -