Stress-induced phase transformations of micro-crystalline silicon films arising at nanoindentations

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The stresses and strain values at various indentation depths are applied to determine the Gibbs free energy at various phases. The intersections of the Gibbs free energy lines are used to determine the possible paths of phase transitions arising at various indentation depths. All the critical contact stresses corresponding to the various phase transitions predicted by the proposed model for the specimens treated at four annealing temperatures were found to be consistent with the experimental results. The proposed model is thus valid for predicting contact parameters using nanoindentations. The critical contact stresses for the phase transitions increased with increasing specimen annealing temperature.

Original languageEnglish
Title of host publicationMechatronics and Materials Processing I
Pages910-914
Number of pages5
DOIs
Publication statusPublished - 2011 Sep 28
Event2011 International Conference on Mechatronics and Materials Processing, ICMMP 2011 - Guangzhou, China
Duration: 2011 Nov 182011 Nov 20

Publication series

NameAdvanced Materials Research
Volume328-330
ISSN (Print)1022-6680

Other

Other2011 International Conference on Mechatronics and Materials Processing, ICMMP 2011
CountryChina
CityGuangzhou
Period11-11-1811-11-20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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