Stress-induced voiding under vias connected to wide Cu metal leads

E. T. Ogawa; J. W. McPherson; J. A. Rosal; K. J. Dickerson; T. C. Chiu; L. Y. Tsung; M. K. Jain; T. D. Bonifield; J. C. Ondrusek; W. R. McKee

Stress-induced voiding under vias connected to wide Cu metal leads

E. T. Ogawa, J. W. McPherson, J. A. Rosal, K. J. Dickerson, T. C. Chiu, L. Y. Tsung, M. K. Jain, T. D. Bonifield, J. C. Ondrusek, W. R. McKee

Department of Mechanical Engineering

Research output: Contribution to journal › Conference article › peer-review

153 Citations (Scopus)

Abstract

Stress-induced voiding is observed in Cu-based, deep-submicron, dual-damascene technologies where voids are formed under the via when the via connects to a wide metal lead below it. The voiding results from the supersaturation of vacancies that develops due to grain growth when the Cu is not properly annealed prior to being fully constrained. The driving force for voiding is shown to be stress migration with a maximum in voiding rate observed at ∼ 190 °C. A diffusional model is presented which shows that the voiding mechanism is an issue primarily for vias connected to wide Cu leads. A thermomechanical stress exponent of 3.2 and a diffusional activation energy of 0.74 eV were determined for this stress-induced voiding mechanism.

Original language	English
Pages (from-to)	312-321
Number of pages	10
Journal	Annual Proceedings - Reliability Physics (Symposium)
Publication status	Published - 2002
Event	Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, United States Duration: 2002 Apr 7 → 2002 Apr 11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

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title = "Stress-induced voiding under vias connected to wide Cu metal leads",

abstract = "Stress-induced voiding is observed in Cu-based, deep-submicron, dual-damascene technologies where voids are formed under the via when the via connects to a wide metal lead below it. The voiding results from the supersaturation of vacancies that develops due to grain growth when the Cu is not properly annealed prior to being fully constrained. The driving force for voiding is shown to be stress migration with a maximum in voiding rate observed at ∼ 190 °C. A diffusional model is presented which shows that the voiding mechanism is an issue primarily for vias connected to wide Cu leads. A thermomechanical stress exponent of 3.2 and a diffusional activation energy of 0.74 eV were determined for this stress-induced voiding mechanism.",

author = "Ogawa, {E. T.} and McPherson, {J. W.} and Rosal, {J. A.} and Dickerson, {K. J.} and Chiu, {T. C.} and Tsung, {L. Y.} and Jain, {M. K.} and Bonifield, {T. D.} and Ondrusek, {J. C.} and McKee, {W. R.}",

year = "2002",

language = "English",

pages = "312--321",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings ; Conference date: 07-04-2002 Through 11-04-2002",

}

TY - JOUR

T1 - Stress-induced voiding under vias connected to wide Cu metal leads

AU - Ogawa, E. T.

AU - McPherson, J. W.

AU - Rosal, J. A.

AU - Dickerson, K. J.

AU - Chiu, T. C.

AU - Tsung, L. Y.

AU - Jain, M. K.

AU - Bonifield, T. D.

AU - Ondrusek, J. C.

AU - McKee, W. R.

PY - 2002

Y1 - 2002

N2 - Stress-induced voiding is observed in Cu-based, deep-submicron, dual-damascene technologies where voids are formed under the via when the via connects to a wide metal lead below it. The voiding results from the supersaturation of vacancies that develops due to grain growth when the Cu is not properly annealed prior to being fully constrained. The driving force for voiding is shown to be stress migration with a maximum in voiding rate observed at ∼ 190 °C. A diffusional model is presented which shows that the voiding mechanism is an issue primarily for vias connected to wide Cu leads. A thermomechanical stress exponent of 3.2 and a diffusional activation energy of 0.74 eV were determined for this stress-induced voiding mechanism.

AB - Stress-induced voiding is observed in Cu-based, deep-submicron, dual-damascene technologies where voids are formed under the via when the via connects to a wide metal lead below it. The voiding results from the supersaturation of vacancies that develops due to grain growth when the Cu is not properly annealed prior to being fully constrained. The driving force for voiding is shown to be stress migration with a maximum in voiding rate observed at ∼ 190 °C. A diffusional model is presented which shows that the voiding mechanism is an issue primarily for vias connected to wide Cu leads. A thermomechanical stress exponent of 3.2 and a diffusional activation energy of 0.74 eV were determined for this stress-induced voiding mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0036081971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036081971&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036081971

SN - 0099-9512

SP - 312

EP - 321

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings

Y2 - 7 April 2002 through 11 April 2002

ER -

Stress-induced voiding under vias connected to wide Cu metal leads

Abstract

All Science Journal Classification (ASJC) codes

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