Stressor design for FinFETs with air-gap spacers

Darsen D. Lu, Angada B. Sachid, Yao Min Huang, Yi Ju Chen, Chun Chi Chen, Min Cheng Chen, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
Publication statusPublished - 2017 Jun 7
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 2017 Apr 242017 Apr 27

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
CountryTaiwan
CityHsinchu
Period17-04-2417-04-27

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Lu, D. D., Sachid, A. B., Huang, Y. M., Chen, Y. J., Chen, C. C., Chen, M. C., & Hu, C. (2017). Stressor design for FinFETs with air-gap spacers. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 [7942485] (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942485