Stressor design for FinFETs with air-gap spacers

Darsen Lu, Angada B. Sachid, Yao Min Huang, Yi Ju Chen, Chun Chi Chen, Min Cheng Chen, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
Publication statusPublished - 2017 Jun 7
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 2017 Apr 242017 Apr 27

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
CountryTaiwan
CityHsinchu
Period17-04-2417-04-27

Fingerprint

Air
Carbon
FinFET

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lu, D., Sachid, A. B., Huang, Y. M., Chen, Y. J., Chen, C. C., Chen, M. C., & Hu, C. (2017). Stressor design for FinFETs with air-gap spacers. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 [7942485] (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942485
Lu, Darsen ; Sachid, Angada B. ; Huang, Yao Min ; Chen, Yi Ju ; Chen, Chun Chi ; Chen, Min Cheng ; Hu, Chenming. / Stressor design for FinFETs with air-gap spacers. 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).
@inproceedings{d69782795c7e422ebba2ee9570fae377,
title = "Stressor design for FinFETs with air-gap spacers",
abstract = "The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25{\%} drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.",
author = "Darsen Lu and Sachid, {Angada B.} and Huang, {Yao Min} and Chen, {Yi Ju} and Chen, {Chun Chi} and Chen, {Min Cheng} and Chenming Hu",
year = "2017",
month = "6",
day = "7",
doi = "10.1109/VLSI-TSA.2017.7942485",
language = "English",
series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
address = "United States",

}

Lu, D, Sachid, AB, Huang, YM, Chen, YJ, Chen, CC, Chen, MC & Hu, C 2017, Stressor design for FinFETs with air-gap spacers. in 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017., 7942485, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Hsinchu, Taiwan, 17-04-24. https://doi.org/10.1109/VLSI-TSA.2017.7942485

Stressor design for FinFETs with air-gap spacers. / Lu, Darsen; Sachid, Angada B.; Huang, Yao Min; Chen, Yi Ju; Chen, Chun Chi; Chen, Min Cheng; Hu, Chenming.

2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7942485 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Stressor design for FinFETs with air-gap spacers

AU - Lu, Darsen

AU - Sachid, Angada B.

AU - Huang, Yao Min

AU - Chen, Yi Ju

AU - Chen, Chun Chi

AU - Chen, Min Cheng

AU - Hu, Chenming

PY - 2017/6/7

Y1 - 2017/6/7

N2 - The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

AB - The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

UR - http://www.scopus.com/inward/record.url?scp=85023168243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85023168243&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2017.7942485

DO - 10.1109/VLSI-TSA.2017.7942485

M3 - Conference contribution

T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Lu D, Sachid AB, Huang YM, Chen YJ, Chen CC, Chen MC et al. Stressor design for FinFETs with air-gap spacers. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7942485. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). https://doi.org/10.1109/VLSI-TSA.2017.7942485