Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

K. I. Lin, H. C. Lin, J. T. Tsai, C. S. Cheng, Y. T. Lu, J. S. Hwang, P. C. Chiu, S. H. Chen, J. I. Chyi, T. S. Wang

Research output: Contribution to journalArticle

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Abstract

Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.

Original languageEnglish
Article number141914
JournalApplied Physics Letters
Volume95
Issue number14
DOIs
Publication statusPublished - 2009 Oct 19

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Fermi surfaces
transport theory
thermionic emission
conduction bands
etching
pumps
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, K. I. ; Lin, H. C. ; Tsai, J. T. ; Cheng, C. S. ; Lu, Y. T. ; Hwang, J. S. ; Chiu, P. C. ; Chen, S. H. ; Chyi, J. I. ; Wang, T. S. / Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure. In: Applied Physics Letters. 2009 ; Vol. 95, No. 14.
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abstract = "Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.",
author = "Lin, {K. I.} and Lin, {H. C.} and Tsai, {J. T.} and Cheng, {C. S.} and Lu, {Y. T.} and Hwang, {J. S.} and Chiu, {P. C.} and Chen, {S. H.} and Chyi, {J. I.} and Wang, {T. S.}",
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Lin, KI, Lin, HC, Tsai, JT, Cheng, CS, Lu, YT, Hwang, JS, Chiu, PC, Chen, SH, Chyi, JI & Wang, TS 2009, 'Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure', Applied Physics Letters, vol. 95, no. 14, 141914. https://doi.org/10.1063/1.3246603

Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure. / Lin, K. I.; Lin, H. C.; Tsai, J. T.; Cheng, C. S.; Lu, Y. T.; Hwang, J. S.; Chiu, P. C.; Chen, S. H.; Chyi, J. I.; Wang, T. S.

In: Applied Physics Letters, Vol. 95, No. 14, 141914, 19.10.2009.

Research output: Contribution to journalArticle

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T1 - Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

AU - Lin, K. I.

AU - Lin, H. C.

AU - Tsai, J. T.

AU - Cheng, C. S.

AU - Lu, Y. T.

AU - Hwang, J. S.

AU - Chiu, P. C.

AU - Chen, S. H.

AU - Chyi, J. I.

AU - Wang, T. S.

PY - 2009/10/19

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N2 - Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.

AB - Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.

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