Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

K. I. Lin; H. C. Lin; J. T. Tsai; C. S. Cheng; Y. T. Lu; J. S. Hwang; P. C. Chiu; S. H. Chen; J. I. Chyi; T. S. Wang

doi:10.1063/1.3246603

Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

K. I. Lin, H. C. Lin, J. T. Tsai, C. S. Cheng, Y. T. Lu, J. S. Hwang, P. C. Chiu, S. H. Chen, J. I. Chyi, T. S. Wang

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Abstract

Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level V_F and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D _s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.

Original language	English
Article number	141914
Journal	Applied Physics Letters
Volume	95
Issue number	14
DOIs	https://doi.org/10.1063/1.3246603
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3246603

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@article{7de3cfc3b97d431cbfbe5652ae6997e0,

title = "Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure",

abstract = "Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.",

author = "Lin, {K. I.} and Lin, {H. C.} and Tsai, {J. T.} and Cheng, {C. S.} and Lu, {Y. T.} and Hwang, {J. S.} and Chiu, {P. C.} and Chen, {S. H.} and Chyi, {J. I.} and Wang, {T. S.}",

note = "Funding Information: This work was partially supported by National Science Council of Taiwan under Contract No. NSC 96-2112-M-006-017-MY3.",

year = "2009",

doi = "10.1063/1.3246603",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

AU - Lin, K. I.

AU - Lin, H. C.

AU - Tsai, J. T.

AU - Cheng, C. S.

AU - Lu, Y. T.

AU - Hwang, J. S.

AU - Chiu, P. C.

AU - Chen, S. H.

AU - Chyi, J. I.

AU - Wang, T. S.

N1 - Funding Information: This work was partially supported by National Science Council of Taiwan under Contract No. NSC 96-2112-M-006-017-MY3.

PY - 2009

Y1 - 2009

N2 - Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.

AB - Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65 Sb0.35 surface intrinsic- n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density D s is estimated as approximately 1.91× 1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65 Sb0.35 SIN+ structure is further demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=70349911617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349911617&partnerID=8YFLogxK

U2 - 10.1063/1.3246603

DO - 10.1063/1.3246603

M3 - Article

AN - SCOPUS:70349911617

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141914

ER -

Strong surface Fermi level pinning and surface state density in GaAs0.65 Sb0.35 surface intrinsic- n+ structure

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