Structural and electrical characteristics of W-N thin films prepared by reactive rf sputtering

Pei Cheun Jiang, Jen-Sue Chen, Y. K. Lin

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The dependence of the electrical and structural characteristics of sputtered W-N films on the substrate bias, N2 partial flow rate, and sputtering was examined. Enhancement of ion bombardment by applying a negative bias on the substrate does not change the crystal structure and bonding state of the W-N films. However, resistivity of W-N films was reduced by increasing the substrate bias. Using 150 W of sputtering power, GIAXRD and XPS analyses indicate that sputtered W-N films will transform from metallic W to amorphous-like WN films with increasing N2 flow ratio. Consequently, resistivity of W-N films increased while the deposition rate decreased with increasing N2 partial flow rate. Compositional analysis revealed that W:N ratio in the crystalline W2N film sputtered at 150 W is overstoichiometric in nitrogen.

Original languageEnglish
Pages (from-to)616-622
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number3
DOIs
Publication statusPublished - 2003 May 1

Fingerprint

Reactive sputtering
sputtering
Thin films
thin films
Sputtering
Substrates
flow velocity
Flow rate
electrical resistivity
Ion bombardment
Deposition rates
bombardment
Nitrogen
X ray photoelectron spectroscopy
Crystal structure
Crystalline materials
nitrogen
crystal structure
augmentation
ions

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "The dependence of the electrical and structural characteristics of sputtered W-N films on the substrate bias, N2 partial flow rate, and sputtering was examined. Enhancement of ion bombardment by applying a negative bias on the substrate does not change the crystal structure and bonding state of the W-N films. However, resistivity of W-N films was reduced by increasing the substrate bias. Using 150 W of sputtering power, GIAXRD and XPS analyses indicate that sputtered W-N films will transform from metallic W to amorphous-like WN films with increasing N2 flow ratio. Consequently, resistivity of W-N films increased while the deposition rate decreased with increasing N2 partial flow rate. Compositional analysis revealed that W:N ratio in the crystalline W2N film sputtered at 150 W is overstoichiometric in nitrogen.",
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Structural and electrical characteristics of W-N thin films prepared by reactive rf sputtering. / Jiang, Pei Cheun; Chen, Jen-Sue; Lin, Y. K.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 3, 01.05.2003, p. 616-622.

Research output: Contribution to journalArticle

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AB - The dependence of the electrical and structural characteristics of sputtered W-N films on the substrate bias, N2 partial flow rate, and sputtering was examined. Enhancement of ion bombardment by applying a negative bias on the substrate does not change the crystal structure and bonding state of the W-N films. However, resistivity of W-N films was reduced by increasing the substrate bias. Using 150 W of sputtering power, GIAXRD and XPS analyses indicate that sputtered W-N films will transform from metallic W to amorphous-like WN films with increasing N2 flow ratio. Consequently, resistivity of W-N films increased while the deposition rate decreased with increasing N2 partial flow rate. Compositional analysis revealed that W:N ratio in the crystalline W2N film sputtered at 150 W is overstoichiometric in nitrogen.

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