Structural and electrical properties of CaCu3Ti4O12 films by room temperature sputtering and rapid thermal annealing process

Chih Ming Wang, Po-Tsung Hsieh, Shih Yuan Lin, Ching Liang Wei, Chih Yu Wen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CaCu3Ti4O12 films deposited on Pt/Ti/SiO2/Si substrates at room temperature by radio frequency magnetron sputtering were annealed with a rapid thermal annealing process at various temperatures and in various atmospheres. X-ray diffraction patterns and scanning electron microscope images demonstrated that the crystalline structures and surface morphologies of CaCu3Ti4O12 films were sensitive to the annealing temperature and ambient atmosphere. The polycrystalline CaCu3Ti4O12 films could be obtained when the annealing temperature was 700°C in air, and the grain size increased significantly with the annealing temperature in O2. The 0.8-μm CaCu3Ti4O12 film that was deposited at room temperature for 2 h and then annealed at 700°C in O2 exhibited a high dielectric constant of 410, a dielectric loss of 0.17 (at 10 kHz) and a leakage current density of 1.28×10-5 A/cm2 (at 25 kV/cm).

Original languageEnglish
Title of host publication11th International Conference and Exhibition of the European Ceramic Society 2009
Pages332-337
Number of pages6
Publication statusPublished - 2009 Dec 1
Event11th International Conference and Exhibition of the European Ceramic Society 2009 - Krakow, Poland
Duration: 2009 Jun 212009 Jun 25

Publication series

Name11th International Conference and Exhibition of the European Ceramic Society 2009
Volume1

Other

Other11th International Conference and Exhibition of the European Ceramic Society 2009
Country/TerritoryPoland
CityKrakow
Period09-06-2109-06-25

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Mechanics of Materials
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films

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