Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

Y. K. Liu, P. L. Tso, D. Pradhan, I. N. Lin, M. Clark, Y. Tzeng

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)


Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

Original languageEnglish
Pages (from-to)2059-2063
Number of pages5
JournalDiamond and Related Materials
Issue number11-12
Publication statusPublished - 2005 Nov 1
EventProceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue -
Duration: 2005 May 112005 May 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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