Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

Y. K. Liu; P. L. Tso; D. Pradhan; I. N. Lin; M. Clark; Y. Tzeng

doi:10.1016/j.diamond.2005.06.012

Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

Y. K. Liu, P. L. Tso, D. Pradhan, I. N. Lin, M. Clark, Y. Tzeng

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

17 Citations (Scopus)

Abstract

Gas mixtures containing up to 40% nitrogen by volume and 1% CH₄ with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

Original language	English
Pages (from-to)	2059-2063
Number of pages	5
Journal	Diamond and Related Materials
Volume	14
Issue number	11-12
DOIs	https://doi.org/10.1016/j.diamond.2005.06.012
Publication status	Published - 2005 Nov
Event	Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue - Duration: 2005 May 11 → 2005 May 14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2005.06.012

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title = "Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen",

abstract = "Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.",

author = "Liu, {Y. K.} and Tso, {P. L.} and D. Pradhan and Lin, {I. N.} and M. Clark and Y. Tzeng",

year = "2005",

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doi = "10.1016/j.diamond.2005.06.012",

language = "English",

volume = "14",

pages = "2059--2063",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "11-12",

note = "Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue ; Conference date: 11-05-2005 Through 14-05-2005",

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TY - JOUR

T1 - Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

AU - Liu, Y. K.

AU - Tso, P. L.

AU - Pradhan, D.

AU - Lin, I. N.

AU - Clark, M.

AU - Tzeng, Y.

PY - 2005/11

Y1 - 2005/11

N2 - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

AB - Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.

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DO - 10.1016/j.diamond.2005.06.012

M3 - Conference article

AN - SCOPUS:27744592013

SN - 0925-9635

VL - 14

SP - 2059

EP - 2063

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 11-12

T2 - Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue

Y2 - 11 May 2005 through 14 May 2005

ER -

Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen

Abstract

All Science Journal Classification (ASJC) codes

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