Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo, Chung-Lin Wu, C. H. Shen, W. H. Chang, T. M. Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors XL(SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
EditorsD.N. Buckley, P.C. Chang, P.D. Fox, W.K. Chan, K. Shiojima
Pages259-267
Number of pages9
Volume2
Publication statusPublished - 2004
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: 2004 May 92004 May 14

Other

OtherState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period04-05-0904-05-14

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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