Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo; C. L. Wu; C. H. Shen; W. H. Chang; T. M. Hsu

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo, C. L. Wu, C. H. Shen, W. H. Chang, T. M. Hsu

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

Original language	English
Pages	259-267
Number of pages	9
Publication status	Published - 2004
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 2004 May 9 → 2004 May 14

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Other	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	04-05-09 → 04-05-14

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Gwo, S., Wu, C. L., Shen, C. H., Chang, W. H., & Hsu, T. M. (2004). Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. 259-267. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Gwo, S. ; Wu, C. L. ; Shen, C. H. et al. / Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.9 p.

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title = "Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy",

abstract = "Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.",

author = "S. Gwo and Wu, {C. L.} and Shen, {C. H.} and Chang, {W. H.} and Hsu, {T. M.}",

year = "2004",

language = "English",

pages = "259--267",

note = "State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium ; Conference date: 09-05-2004 Through 14-05-2004",

}

Gwo, S, Wu, CL, Shen, CH, Chang, WH & Hsu, TM 2004, 'Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy', Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 04-05-09 - 04-05-14 pp. 259-267.

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. / Gwo, S.; Wu, C. L.; Shen, C. H. et al.
2004. 259-267 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

AU - Gwo, S.

AU - Wu, C. L.

AU - Shen, C. H.

AU - Chang, W. H.

AU - Hsu, T. M.

PY - 2004

Y1 - 2004

N2 - Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

AB - Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

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M3 - Paper

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SP - 259

EP - 267

T2 - State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium

Y2 - 9 May 2004 through 14 May 2004

ER -

Gwo S, Wu CL, Shen CH, Chang WH, Hsu TM. Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. 2004. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

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