Structural and optical properties of cubic-InN quantum dots prepared by ion implantation in Si (100) substrate

Yi Kai Huang, Chuan Pu Liu, Yen Lin Lai, Cheng Yu Wang, Yi Feng Lai, Hung Chin Chung

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6 Citations (Scopus)

Abstract

The authors have synthesized InN quantum dots by ion implantation into a Si (100) substrate followed by a postannealing process. X-ray photoemission spectroscopy data verified the formation of In-N bonding in both as-implanted and postannealed samples. Diffraction patterns from transmission electron microscopy (TEM) confirm that the dots are of cubic crystal (zinc-blende phase) with no presence of wurtzite InN. The silicon matrix provides a constraint for the formation of the InN cubic metastable phase. However, dislocations were revealed by high resolution TEM at the interfaces between the dots and the silicon. In addition, the authors found that as the annealing temperature or time increases, dot size increases and dot density decreases. Furthermore, they demonstrate that the main emission energy of zinc-blende InN dots is about 0.736 eV.

Original languageEnglish
Article number091921
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 2007 Sep 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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